Method for cultivating Chinese yams in no-tillage tuberization manner
A cultivation method and tuber-forming technology, which are applied in the field of no-tillage and tuber-setting in Huaishan, can solve the problems of time-consuming cultivation, labor-intensive efficiency, low yield and the like, and achieve the effects of improving planting efficiency, easy seed harvesting and planting yield.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0015] A no-tillage and potato-bearing cultivation method for Chinese yam, comprising the following steps:
[0016] a) Ditching and soil preparation: according to the width of the border surface 1.5 minutes, the height of the border surface is 25cm, the ditch is ditched parallel to the plant spacing of 25cm, and the ditch is ditched underground by 35° obliquely from one side of the border to the other side of the plane, and the ditch width is 7cm , After ditching, shovel a small semi-circular ditch;
[0017] b) Laying plastic: the plastic or hard material to be laid is 9mm thick and 11cm in diameter. The plastic film laying on the ground should be flat, and the plastic film should be placed obliquely according to the opened circular ditch. After laying flat, use clean river sand or soft sand to press the plastic. , and then cover the fine soil layer 15cm;
[0018] c) Fertilization: 200kg of plant ash per mu, 1000kg of decomposed organic fertilizer, 75% of furrow and ditch, an...
Embodiment 2
[0024] A no-tillage and potato-bearing cultivation method for Chinese yam, comprising the following steps:
[0025] a) Ditching and soil preparation: according to the width of the border surface 1.6 compartments, the height of the border surface is 30cm, the ditch is ditched parallel to the plant spacing of 30cm, and the ditch is ditched underground by 35° obliquely from one side of the border to the other side, and the ditch width is 7cm , After ditching, shovel a small semi-circular ditch;
[0026] b) Laying plastic: the plastic or hard material to be laid is 9mm thick and 11cm in diameter. The plastic film laying on the ground should be flat, and the plastic film should be placed obliquely according to the opened circular ditch. After laying flat, use clean river sand or soft sand to press the plastic. , and then cover the fine soil layer 20cm;
[0027] c) Fertilization: 220kg of plant ash per mu, 1100kg of decomposed organic fertilizer, 75% of furrow and ditch, and 25% of...
Embodiment 3
[0033] A no-tillage and potato-bearing cultivation method for Chinese yam, comprising the following steps:
[0034] a) Ditching and soil preparation: divide the compartments according to the width of the border surface of 1.6m, the height of the border surface is 35cm, and the ditch is ditched parallel to the plant spacing of 30cm. 8cm, after ditching, shovel a small ditch similar to a semicircle;
[0035] b) Laying plastic: the plastic or hard material to be laid is 10mm thick and 12cm in diameter. The plastic film laying on the ground should be flat, and the plastic film should be placed obliquely according to the opened circular ditch. After laying flat, use clean river sand or soft sand to press the plastic. , and then cover the fine soil layer 25cm;
[0036] c) Fertilization: 250kg of plant ash per mu, 1200kg of decomposed organic fertilizer, 75% of furrow and ditch, and 25% of plastic or hard materials;
[0037] d) Planting: Disinfect yam seeds before sowing, and then ...
PUM
Property | Measurement | Unit |
---|---|---|
Diameter | aaaaa | aaaaa |
Diameter | aaaaa | aaaaa |
Diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com