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Split gate resistor structure and manufacturing method thereof

A manufacturing method and resistor technology, which are applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuits, etc., can solve the problems of inability to change the width of the split gate resistor 20, poor practicability and flexibility, etc., and improve practicability. and the effect of flexibility

Inactive Publication Date: 2013-11-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the width of the grid-dividing resistor 20 can determine the resistance value of the grid-dividing resistor 20, when other conditions remain unchanged and the process requires grid-dividing resistors 20 with different resistance values, only the length of the grid-dividing resistor 20 can be changed, but the grid-dividing resistor 20 cannot be changed. The width, practicality and flexibility of gate resistor 20 is not good

Method used

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  • Split gate resistor structure and manufacturing method thereof
  • Split gate resistor structure and manufacturing method thereof
  • Split gate resistor structure and manufacturing method thereof

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Embodiment Construction

[0040] The split-gate resistor structure and its manufacturing method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0041] Please refer to figure 2 , the present embodiment proposes a method for fabricating a split-gate resistor, comprising the steps of:

[0042] First, a semiconductor substrate is provided, and the semiconductor substrate is provided with a shallow trench isolation layer 100;

[0043] Next, the divided gate resistance layer 200 and the hard mask layer 300 are sequentially formed on the shallow trench isolation layer 100 of the semicond...

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Abstract

The invention discloses a split gate resistor structure and a manufacturing method thereof. A hard mask layer is etched to form a first groove, a first side wall is formed in the first groove, the first side wall is etched to form a second groove, a second side wall and a virtual gate electrode are sequentially formed in the second groove, and finally the hard mask layer is removed. During the procedures, the width of a split gate resistor layer is increased and easy to adjust, and therefore practicality and flexibility of a split gate resistor are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a split-gate resistor structure and a manufacturing method thereof. Background technique [0002] During the fabrication of semiconductor devices such as memories, it is often necessary to fabricate resistor structures. [0003] The split-gate resistor structure in the prior art is as figure 1 shown, including: [0004] A semiconductor substrate 10 provided with a shallow trench isolation layer, a plurality of sub-gate resistors 20 formed on the surface of the shallow trench isolation layer, and trenches are arranged between the sub-gate resistors 20; [0005] a first spacer 30 formed on the surface of the divided gate resistor 20; [0006] A second sidewall 40 formed in the trench, the second sidewall 40 covers the divided gate resistor 20 and is in close contact with the side surface of the first sidewall 30; [0007] a dummy gate 50 formed on the surface of the s...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L23/64
Inventor 高超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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