Method for obtaining high-quality X-ray absorption spectrum of thin film sample

Abstract

The invention discloses a method for obtaining a high-quality X-ray absorption spectrum of a thin film sample. In a measuring process of the thin film sample, after diffraction spots are generated by exposing a single-crystal substrate of the thin film sample through a dry film, exposure points are shielded by a lead sheet to prevent diffraction signals caused by the substrate from entering a detector so as to obtain the high-quality X-ray absorption spectrum of the thin film sample. The dry film consists of carbon, nitrogen, oxygen and a trace element lithium, has an effective atomic number within 6-8 and the film thickness of about 100-200 microns, does not cause a serious background to the hard X-ray absorption spectrum, and particularly can be integrated with a light filter in the detector to filter out a scattering effect caused by incident light and a diffraction effect caused by the substrate of the thin film sample. Therefore, a simple and effective way for obtaining the high-quality X-ray absorption spectrum of the thin film sample is provided.

Description

technical field [0001] The invention relates to a method for obtaining the X-ray absorption spectrum, in particular to a method for obtaining the X-ray absorption spectrum of a high-quality film sample. Background technique [0002] In recent years, Group III nitride semiconductor materials (indium nitride, gallium nitride, aluminum nitride) as superior third-generation semiconductor materials have been widely used in the optoelectronic industry (including white light lighting), high-frequency high-speed devices, high-power devices, radar Technology, ultraviolet detection devices and many other fields have been extensively researched and applied. However, III-nitride semiconductor materials are mostly prepared on heterogeneous substrates. At present, epitaxial growth of high-quality III-nitrides on silicon substrates and sapphire substrates and related doping research has become a new round of upsurge in the comprehensive application research of III-nitrides, and it is also...

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Problems solved by technology

In addition, the X-ray absorption spectra under different incident angles are spliced, and the diffraction peak effect is deducted from the experimental data. In this case, the surface of the thin film sample measured each time is required to be uniform, and the background and the background are completely consistent; the energy-resolving detector is also available. In many cases, it works well, because the energy of the diffraction peak and the sample fluorescence peak are very different, and the detector only accepts the fluorescence generated by the sample. However, when the diffraction peak is strong enough, it will cause the energy-resolving detector to be temporarily blinded. It is not conducive to the normal operation of energy-resolving detectors

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