Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electric leakage prevention and electric level compatible circuit based on I2C (Intel-Integrated Circuit) bus

A compatible circuit and anti-leakage technology, which is applied in the direction of logic circuit coupling/interface and logic circuit connection/interface layout using field effect transistors, can solve the problems of difficult conversion of level conversion chips, and achieve anti-leakage and power supply. flat compatible effect

Inactive Publication Date: 2012-10-24
SHANGHAI SIMCOM LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But if the voltage difference between the two is small, such as 0.1V, 0.2V, it is difficult for the level conversion chip to achieve conversion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric leakage prevention and electric level compatible circuit based on I2C (Intel-Integrated Circuit) bus
  • Electric leakage prevention and electric level compatible circuit based on I2C (Intel-Integrated Circuit) bus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] Such as figure 2 As shown, an I2C-based anti-leakage and level-compatible circuit includes a main controller 1, a slave device 2, I2C, a MOS tube, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a first power supply VCC_A, a second power supply VCC_B;

[0019] The I2C includes a clock signal line SCL and a data line SDA, one end SCL_A of the clock signal line SCL is connected to the master controller 1, and the other end SCL_B of the clock signal line SCL is connected to the slave device 2; One end SDA_A of the data line SDA is connected to the master controller 1, and the other end SDA_B of the data line SDA is connected to the slave device 2; the resistor R1 is connected between one end SCL_A of the clock signal line SCL and the first power supply VCC_A Between, the resistor R2 is connected between one end SDA_A of the data line SDA and the first power source VCC_A, the resistor R3 is connected between the other end SCL_B of the clock signal line SCL and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an electric leakage prevention and electric level compatible circuit based on an I2C (Inter-Integrated Circuit) bus, which comprises a master controller, a slave unit, an I2Cbus, a first power source VCC_A and a second power source VCC_B. The I2C bus comprises a clock signal line SCL (Serial clock line) and a data line SDA (Serial Data Line); one end SCL_A of the clock signal line SCL is connected with the master controller, and the other end SCL_B of the clock signal line SCL is connected with the slave unit; one end SDA_A of the data line SDA is connected with the master controller and the other end SDA_B of the data line SDA is connected with the slave unit; the electric leakage prevention and electric level compatible circuit further comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4 and an MOS(Metal Oxide Semiconductor)tube; and the MOS tube is connected on the I2C bus and is used for realizing electric level compatibility and electric leakage prevention. Compared with the prior art, the electric leakage prevention and electric level compatible circuit has the advantages that electric leakage prevention and electric level compatibility can be effectively realized under the occasion that the voltage difference of the power source VCC_A and the power source VCC_B is smaller than 0.6V and the like.

Description

technical field [0001] The invention relates to an anti-leakage and level-compatible circuit, in particular to an I2C-based anti-leakage and level-compatible circuit. Background technique [0002] Due to the development of large-scale integrated circuit technology, peripheral circuits such as ROM, RAM, I / O ports, A / D, and D / A necessary for a single chip to integrate CPU and form a single working system have been realized, which is often said microcontroller or microcontroller. At present, many companies in the world produce single-chip microcomputers, and there are many varieties: including CPUs of various word lengths, ROMs and RAMs of various capacities and varieties, and I / Os with different functions, etc. However, the variety and specifications of single-chip microcomputers are limited, so some kind of single-chip microcomputers can only be used for expansion. There are two ways to expand: one is a parallel bus, and the other is a serial bus. Due to the few serial bus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185
Inventor 徐建红
Owner SHANGHAI SIMCOM LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com