Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Substrate processing method

A substrate processing device and processing chamber technology, which is applied in the direction of discharge tubes, electrical components, plasma, etc., can solve the problems of poor controllability of etching processing and achieve the effect of improving processing controllability

Active Publication Date: 2012-10-17
TOKYO ELECTRON LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, there is a problem that the process controllability of etching is not so good when using LF high-frequency voltage to generate a bias voltage on the susceptor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate processing method
  • Substrate processing method
  • Substrate processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0040] figure 1 It is a cross-sectional view schematically showing the structure of the substrate processing apparatus of this embodiment. This substrate processing apparatus performs plasma processing on a wafer for a semiconductor device (hereinafter referred to simply as a "wafer") as a substrate.

[0041] exist figure 1 Among them, the substrate processing apparatus 10 has, for example, a chamber 11 for accommodating a wafer W having a diameter of 300 mm, and a columnar susceptor 12 (mounting table) on which the wafer W is placed on the upper surface is arranged in the chamber 11 . In the substrate processing apparatus 10 , the side exhaust passage 13 is formed by the inner side wall of the chamber 11 and the side surface of the susceptor 12 . An exhaust plate 14 is arranged in the middle of the side exhaust passage 13 .

[0042] The exhaust plate 14 is a plat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).

Description

technical field [0001] The present invention relates to a substrate processing method for performing predetermined processing on a substrate using plasma. Background technique [0002] A substrate processing apparatus for performing predetermined plasma processing on a semiconductor wafer (hereinafter referred to as "wafer") as a substrate using plasma, comprising: a depressurized processing chamber; a mounting table arranged in the processing chamber; and a mounting table connected to the processing chamber 1. An HF high-frequency power supply that applies a relatively high-frequency high-frequency voltage (hereinafter referred to as "HF (High Frequency, high frequency) high-frequency voltage") to the base as the mounting table; An LF high-frequency power supply that applies a relatively low-frequency high-frequency voltage (hereinafter referred to as "LF (Low Frequency, low frequency) high-frequency voltage"). [0003] The HF high-frequency voltage excites the processing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32706H01J37/32091H01J37/32165H01J37/32H01J37/32082H01J37/32366H01J37/32642H01J37/32697H01J37/32724H05H1/46H01L21/3065H01J2237/327
Inventor 桧森慎司山田纪和大瀬刚
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com