Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a semiconductor structure, which is characterized by comprising the following steps of: providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate; forming a semiconductor device on the epitaxial layer, wherein the semiconductor device comprises a source region, a drain region and a grid stack; and forming a conductive layer which is not connected with the semiconductor device at the periphery of the semiconductor device and used for reducing base resistance. Correspondingly, the invention also provides a semiconductor structure manufactured by the method. The manufacturing method and the semiconductor structure are used to restrain the parasitic effect of a BJT (bipolar junction transistor) effectively, thereby improving the overall performance of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the development of the semiconductor industry, integrated circuits with higher performance and stronger functions require greater component density, and the size, size, and space of each component, between components, or each component itself need to be further reduced (currently, it has reached nanometers. level), so the requirements for process control in the manufacturing process of semiconductor devices are relatively high. [0003] With the rapid development of microelectronics technology, the quality of epitaxial layers grown on high-concentration substrates is getting better and better, so many thick epitaxial devices based on epitaxial layers have appeared in recent years. In power amplifier devices, VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Ef...

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Problems solved by technology

[0004] Although the quality of the epitaxial layer is getting better and better, when the epitaxial layer reaches a certain thickness, the thick epitaxial layer will make the base resistance of the parasitic BJT (bipolar junction transistor) very large, especially for lateral high voltage devices such as LDMOS This effect is more pronounced

However, due to the increase of the base resistance, a small current in the epitaxial layer can also turn on the parasitic BJT or cause a large leakage current due to the amplification of the parasitic BJT.

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