Partial silicon on insulator (PSOI) lateral super-junction power semiconductor device

Abstract

The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a semiconductor body, an insulation buried layer, a gate and an electrode, wherein the gate and the electrode are arranged on the semiconductor body, a super-junction structure is arranged above the insulation buried layer, consists of super-junction n regions and super-junction p regions in alternate distribution, and is connected with a p-type body region. An n-type compensation region arranged in a direction vertical to the super-junction structure is connected with the super-junction structure and the insulation buried layer, and extends into a substrate. By the invention, the substrate-assisted depletion effect existing in the lateral super-junction power device can be effectively inhibited so as to improve the voltage resistance of the device. Compared with the conventional charge-compensation lateral super-junction device, the PSOI lateral super-junction power semiconductor device can better keep the super-junction voltage resistance property without increasing the thickness of the top silicon because the n-type compensation region is vertical to the super-junction structure.

Description

technical field [0001] The invention belongs to the field of power semiconductor devices, in particular to SOI (Semiconductor On Insulator) lateral superjunction power semiconductor devices. Background technique [0002] Power semiconductor devices play an irreplaceable key role in the national economy and social life, and are widely used in consumer electronics, industrial control and defense equipment. Power semiconductor devices are also the key technology and basic technology for energy saving and emission reduction. Especially in my country, energy saving and consumption reduction is one of the basic national policies of the country. The development and promotion of semiconductor power devices is an important technical means for energy saving. [0003] Among power semiconductor devices, MOS type power devices (Power MOSFETs) can significantly reduce the switching time and increase the switching frequency of the device. However, in high-voltage applications, the on-resi...

AI Technical Summary

Problems solved by technology

The charge imbalance between the N and P regions of the superjunction reduces the withstand voltage of SOI lateral superjunction devices

Images