Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A silicon slice deviation dynamic regulation method and device by photoelectric switch

A photoelectric switch, silicon wafer technology, applied in circuits, electrical components, transportation and packaging, etc., can solve problems such as affecting the silicon wafer process, complex operating procedures, and inability to guarantee silicon wafers.

Active Publication Date: 2008-07-09
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the transfer of silicon wafers, often due to problems such as control, the silicon wafers cannot be transferred to the designated location
Especially in the transmission process of 300 mm silicon wafers, it is necessary to transport the silicon wafers from the transmission chamber to the reaction chamber. During the transportation process, the manipulator may sometimes have the center position deviation or drop of the silicon wafers, so that it is impossible to guarantee whether the silicon wafers are It can be accurately centered on the reactive electrostatic chuck, which will seriously affect the subsequent process of silicon wafers
In the traditional solution, a positioning adjustment device is usually installed at the initial transmission end, which is mainly composed of a video device, a motor and a controller, and an ordinary positioning adjustment device is installed at the center of the connection between the transmission chamber and the reaction chamber. A photoelectric sensor is used to detect the presence or absence of silicon wafers, or two sensors are installed at the connection between the transmission chamber and the reaction chamber to detect the presence or absence of silicon wafers and calculate the deviation. This method has complicated operating procedures in actual use, and prone to deviation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A silicon slice deviation dynamic regulation method and device by photoelectric switch
  • A silicon slice deviation dynamic regulation method and device by photoelectric switch
  • A silicon slice deviation dynamic regulation method and device by photoelectric switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0020] Basic detection principle: such as figure 1 As shown, in the process of the manipulator transporting the silicon wafer from the transfer chamber to the reaction chamber, the transfer time of the silicon wafer is judged by the photoelectric switch sensor 1, and the running distance is calculated by combining the average speed of the manipulator to obtain the current silicon wafer on the manipulator. The center coordinate of the chip is compared with the center coordinate value of the silicon chip when there is no deviation, and the difference obtained is the required deviation adjustment value.

[0021] Device layout: as figure 2 , Figure 4 As shown, the photoelectric switch sensor 1 is located off-center at the connection between the transfer chamber and the reaction chamber, and the manipulator is used to transport the sili...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of the adjustment technology of a silicon wafer and provides a method and a device to use a photoelectric switch for dynamic adjustment of the deviation of the silicon wafer. The basic detection principle of the method is that: in the process of using a mechanical hand to deliver the silicon wafer to a reaction chamber from a transfer chamber, the transfer time of the silicon wafer is judged by a photoelectric switch sensor, and the operation distance is calculated by the combination of the average motion speed of the mechanical hand, so as to obtain the center coordinate of the silicon wafer on the current mechanical hand, the comparison of the value and the center coordinate of the silicon wafer without the deviation is carried out, and the obtained value difference is the deviation adjustment value which is needed. The invention has the advantage and the beneficial effect of accurately calculating the position of the deviation of the silicon wafer and guiding the mechanical hand to adjust the deviation of the silicon wafer automatically.

Description

technical field [0001] The invention relates to the technical field of silicon chip adjustment, in particular to a method and device for dynamically adjusting silicon chip deviation by a photoelectric switch. Background technique [0002] In the modern silicon wafer manufacturing process, due to the different processing procedures and processing environments involved, the silicon wafer needs to be transferred. During the transfer of silicon wafers, often due to problems such as control, the silicon wafers cannot be transferred to the designated location. Especially in the transmission process of 300 mm silicon wafers, it is necessary to transport the silicon wafers from the transmission chamber to the reaction chamber. During the transportation process, the manipulator may sometimes have the center position deviation or drop of the silicon wafers, so that it is impossible to guarantee whether the silicon wafers are It can be accurately centered on the reactive electrostatic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/68H01L21/677
Inventor 李永军
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products