Solid-state image sensor

A technology for solid-state imaging elements and semiconductors, which can be used in electric solid-state devices, electrical components, semiconductor devices, etc., and can solve problems such as superimposed noise.

Inactive Publication Date: 2008-01-30
SANYO ELECTRIC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem that noise is superimposed on the information charge

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0053]

[0054] FIG. 1 is a plan view showing the vicinity of the boundary between the imaging unit 50 and the storage unit 52 of the CCD solid-state imaging device in the first embodiment of the present invention. 2 shows a cross-sectional view and potential distribution of the imaging unit 50 in the X-X' direction, and FIG. 3 shows a cross-sectional view and potential distribution of the imaging unit 50 in the Y-Y' direction.

[0055] First, the planar configuration of the imaging unit 50 of the CCD solid-state imaging device in this embodiment will be described with reference to FIG. 1 . A plurality of first channel regions 4 are provided in parallel to each other in the imaging unit 50 . The first channel region 4 is formed with a predetermined gap, and a plurality of isolation regions 12 are provided in parallel to each other in the gap. The first channel region 4 is electrically divided by two adjacent separation regions 12 . The first channel region 4 partitioned by...

no. 2 approach

[0094] Next, a CCD solid-state imaging device according to another embodiment of the present invention will be described.

[0095] FIG. 11 is a schematic view showing the vicinity of the boundary between the imaging unit 50 and the storage unit 52 of the CCD solid-state imaging device in the second embodiment. Shown in Fig. 11: be arranged on the first channel region 4 that extends parallel to each other on the semiconductor substrate; Be arranged in the gap of the first channel region 4, the second, the third channel region 8,15; ~ the separation region 12 electrically divided by the third channel region 4, 8, 15; the overflow trench region 14 having the protrusion 18; the first transfer electrodes 10-1 to 10-3 and the second transfer electrodes 10-4~ 10-6.

[0096] The overflow trench region 14 of this embodiment is provided in every other isolation region 12 . Furthermore, the overflow trench region 14 extends near the center of the separation region 12 , and unlike the f...

no. 3 approach

[0101] FIG. 12 is a schematic view showing the vicinity of the boundary between the imaging unit 50 and the storage unit 52 of the CCD solid-state imaging device in the third embodiment. Figure 12 shows in the same manner as in Figure 11: a first channel region 4, a second channel region 8, a third channel region 15, a separation region 12, an overflow trench region 14 with a protrusion 18, The first transfer electrodes 10-1 to 10-3 and the second transfer electrodes 10-4 to 10-6.

[0102] The overflow trench regions in this embodiment are provided in all the separation regions 12, and are arranged to extend near the center of the separation regions 12, and each overflow trench region 14 has a direction toward the adjacent two second channel regions 8. The protrusions 18 on both sides. In the discharge drive of the present embodiment, the information charges accumulated in the second channel region 8 are discharged to two adjacent overflow trench regions 14 via the protruding...

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PUM

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Abstract

In cases where AGP driving is applied to a CCD solid-state image sensor having a horizontal overflow drain structure, a problem arises in that the charges overflow into the second channel regions ( 8 ) from the overflow drain regions ( 14 ), and noise is superimposed on the information charges. The CCD solid-state image sensor has a plurality of first channel regions ( 4 ) that are disposed parallel to each other, overflow drain regions ( 14 ) that are disposed between neighboring first channel regions ( 4 ), a plurality of separation regions ( 12 ) that are disposed between the first channel regions ( 4 ) and overflow drain regions ( 14 ), and a plurality of first transfer electrodes ( 10 ) that are disposed parallel to each other over the plurality of first channel regions in the direction perpendicular to the first channel regions ( 4 ). In other to solve the problem described above, the CCD solid-state image sensor further comprises second channel regions ( 9 ) which are disposed in positions corresponding to the regions where the first channel regions ( 4 ) and specified first transfer electrodes ( 10 ) intersect, and which have a higher concentration than the first channel regions ( 4 ), and the overflow drain regions ( 14 ) adjacent to the second channel regions ( 8 ) have protruding parts ( 18 ) that protrude toward the second channel regions ( 8 ).

Description

technical field [0001] The present invention relates to a CCD solid-state imaging element, in particular to an overflow groove (OverflowDrain, OverflowDrain) structure. Background technique [0002] FIG. 13 is a schematic configuration diagram of a CCD solid-state imaging device of a frame transfer method. The CCD solid-state imaging device of the frame transfer method has an imaging unit 50 , a storage unit 52 , a horizontal transfer unit 54 , and an output unit 56 . The information charges generated by the imaging unit 50 are transferred to the storage unit 52 at high speed. The information charge is held by the storage unit 52 and transferred to the horizontal transfer unit 54 for each row, and transferred from the horizontal transfer unit 54 to the output unit 56 in units of one pixel. The output unit 56 converts the charge amount of each pixel into a voltage value, and outputs the change in the voltage value as a CCD. [0003] When excess information charge occurs in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/148
CPCH01L27/14812H01L27/1485H01L27/14887H01L27/146
Inventor 伊泽慎一郎
Owner SANYO ELECTRIC CO LTD
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