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Concurrent programming of non-volatile memory

A non-volatile storage and non-volatile technology, applied in the field of programming non-volatile memory, can solve problems such as increased time and the number of verification operations

Inactive Publication Date: 2010-06-16
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the number of programmable states increases, the number of verification jobs increases and takes more time

Method used

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  • Concurrent programming of non-volatile memory
  • Concurrent programming of non-volatile memory
  • Concurrent programming of non-volatile memory

Examples

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Embodiment Construction

[0033] The invention is illustrated by way of illustration and not limitation in the various figures of the accompanying drawings, in which like reference numerals indicate similar elements. It should be noted that references to one or one embodiment in this disclosure are not necessarily the same embodiment, but rather such references mean at least one embodiment.

[0034] In the following description, various aspects of the invention will be described. However, it will be readily apparent to those skilled in the art that the present invention may be practiced using only some or all of its aspects. For purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without all of these specific details. In other instances, well-known features were omitted or simplified in order not to obscure...

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Abstract

One embodiment of the present invention includes applying a first value to a bit line, boosting word lines associated with the bit line and a common selection line to create a first condition based onthe first value, and cutting off a boundary non-volatile storage element associated with the common selection line to maintain the first condition for a particular non-volatile storage element associated with the bit line and common selection line. A second value is applied to the bit line and at least a subset of the word lines are boosted to create a second condition for a different non-volatile storage element associated with the bit line and common selection line. The second condition is based on the second value. The first condition and the second condition overlap in time. Both non-volatile storage elements are programmed concurrently, based on their associated conditions.

Description

[0001] Related Application Cross Reference [0002] This application is related to the following U.S. patent applications, all of which are incorporated herein by reference in their entirety: [0003] Application Serial No. 10 / 839,764, "Boosting To Control Programming Of Non-Volatile Memory," filed May 5, 2004, inventor by Daniel C. Guterman, Nima Mokhlesi and Yupin Fong; [0004] Application No. 10 / 839,806, "Bitline Governed Approach For Program Control of Non-Volatile Memory," filed May 5, 2004, inventor For Daniel C. Guterman, Nima Mokhlesi and Yupin Fong; [0005] Application No. 10 / 842,941 "Latched Programming Of Memory And Method" filed on May 10, 2004, the inventor is Raul-Adrian Cernea. technical field [0006] The present invention relates to techniques for programming non-volatile memory. Background technique [0007] Semiconductor memory devices have become more and more commonly used in various electronic devices. For example, non-volatile semiconductor mem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/04G11C16/10G11C11/34
CPCG11C16/10G11C16/0483G11C11/5628G11C16/34
Inventor 丹尼尔·C·古特曼
Owner SANDISK TECH LLC
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