Method for modeling diode multiple simulator format SPICE model

Abstract

The invention discloses a modeling method of a diode SPICE model with various emulator formats, which includes the steps that: the extraction of the diode model parameter with HSPICE emulator format is carried out; the important parameter of the HSPICE emulator format is transformed into the diode model parameter with corresponding SPECTRE emulator format, and the extraction of the diode model parameter in the non-high current injecting area of the SPECTRE emulator format is carried out; the model parameter IKP which generates current distortion of the perimeter part of the diode is added as the model parameter, when the high current is injected, and the extraction of the diode model parameter in the high current injecting area of the SPECTRE emulator format is carried out; the numerical value of the IKP is optimized. The invention can obtain the diode SPICE model with better simulation result and fitness of test data in a short time.

Description

technical field [0001] The invention relates to the field of modeling methods of diode models, in particular to a modeling method of SPICE models in multiple diode emulator formats. Background technique [0002] Diode is an important semiconductor device in semiconductor integrated circuits, and it is widely used in the field of integrated circuit technology. In order to predict the performance and reliability of a diode device in its environment, it is necessary to simulate the diode. [0003] SPICE (simulation program with integrated circuit emphasis) is a circuit simulation program developed by the University of California, Berkeley in 1972. Subsequently, the version is continuously updated, and the functions are continuously enhanced and perfected. In 1988, SPICE was designated as the American National Industrial Standard. It can simulate and analyze many components. In the process of extracting the diode SPICE model, it is generally necessary to extract models suita...

AI Technical Summary

Problems solved by technology

Using the existing SPICE model modeling method of multiple simulator formats of diodes, although the model parameters of the two simulator formats can finally obtain a good fit between the model simulation and test results, but However, it destroys the compatibility between the model parameters of the same diode HSPICE simulator format and the model parameters of the SPECTRE simulator format

At the same time, the modeling efficiency of the diode is also greatly affected by

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