Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for operating a semiconductor device

a technology of semiconductor devices and trench devices, applied in semiconductor devices, process and machine control, instruments, etc., can solve the problems of dense trench devices being more susceptible to avalanche breakdowns and useless devices

Inactive Publication Date: 2012-12-20
INFINEON TECH AG
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Transient avalanche breakdowns frequently occur in demanding applications and can render a device useless.
While semiconductor devices of the trench dense concept exhibit improved properties regarding on-state resistance in comparison with standard devices of the field electrode concept, dense trench devices are more susceptible to avalanche breakdowns.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for operating a semiconductor device
  • Method for operating a semiconductor device
  • Method for operating a semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019]Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the figures. Each example is provided by way of explanation, and is not meant as a limitation of the invention. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the present invention includes such modifications and variations. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not scaled and are for illustrative purposes only.

[0020]The term “lateral” as used in this specification intends to describe an orientation parallel to the main surface of a semiconductor wafer or die.

[0021]The term “vertical” as used in this specification intends to describe an orientation which is arranged perpendicular to the main surface of the semiconductor wafer or ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes a semiconductor substrate having at least a pn-junction arranged in the semiconductor substrate. At least a field electrode is arranged at least next to a portion of the pn-junction, wherein the field electrode is insulated from the semiconductor substrate. A switching device is electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction.

Description

FIELD OF THE INVENTION[0001]This description refers to embodiments of semiconductor devices and particularly power semiconductor devices with improved avalanche breakdown characteristics. Further embodiments refer to a method for operating a semiconductor device and a method for manufacturing a semiconductor device.BACKGROUND OF THE INVENTION[0002]Improvement of reliability and robustness of semiconductor devices is an ongoing aim in the development of semiconductor device and particularly power semiconductor devices. To ensure that devices which were delivered to customer meet the demands, the semiconductor devices are subjected to extended reliability tests before delivery. For example, the properties of the semiconductor device during an avalanche breakdown influence the reliability and are therefore subject for further developments. Transient avalanche breakdowns frequently occur in demanding applications and can render a device useless.[0003]Two main device concepts having diff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G05F3/02
CPCH01L29/402H01L29/407H01L29/41766H01L29/4236H01L29/42368H01L29/66727H01L29/66734H01L2924/0002H01L29/7397H01L29/7813H01L29/8611H01L29/8613H01L2924/00
Inventor ZUNDEL, MARKUS
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com