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Substrate processing apparatus, control method adopted in substrate processing apparatus and program

A technology of a substrate processing device and a control method, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as increasing the burden of detoxification devices, and achieve the effect of realizing energy or cost and reducing burden

Active Publication Date: 2006-08-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if Figure 25 As shown, since the exhaust from each treatment chamber is concentrated to a common detoxification device, for example, if the treatment is performed in parallel by each treatment chamber, the burden on the detoxification device will increase due to the type of treatment.

Method used

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  • Substrate processing apparatus, control method adopted in substrate processing apparatus and program
  • Substrate processing apparatus, control method adopted in substrate processing apparatus and program
  • Substrate processing apparatus, control method adopted in substrate processing apparatus and program

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Embodiment Construction

[0122] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in this specification and the drawings, the same reference numerals are attached to components having substantially the same functional configuration, and repeated descriptions are omitted.

[0123] (Example of configuration of substrate processing equipment)

[0124] First, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. figure 1 It is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus 100 includes a processing unit 110 for performing various processes such as film formation processing and etching processing on a substrate to be processed, such as a semiconductor wafer (hereinafter also simply referred to as "wafer") W; The wafer ...

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Abstract

A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means. In this substrate processing apparatus, switch-over control is executed to select either the scrubbing common discharge system of the non-scrubbing common discharge system in correspondence to the type of processing executed in the processing chamber.

Description

technical field [0001] The present invention relates to a substrate processing device equipped with a detoxification device for detoxifying exhaust gas discharged during substrate processing of semiconductor wafers or liquid crystal substrates, a control method and a program for the substrate processing device. Background technique [0002] As a substrate processing apparatus, there is a plasma processing apparatus that uses a predetermined gas to process a substrate in a processing chamber, such as a semiconductor wafer (hereinafter also simply referred to as a "wafer"), and performs film formation processing or etching processing or processing using a predetermined gas. Indoor cleaning, etc. [0003] Since the exhaust gas discharged from the processing chamber of such a substrate processing apparatus may contain harmful gas or gas that is a burden on the environment, it is not appropriate to discharge it to the atmosphere as it is from the viewpoint of environmental protec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/67H01L21/3065H01L21/205C23C16/44C23F4/00
Inventor 中村博小林俊之早坂伸一郎贝瀬精一
Owner TOKYO ELECTRON LTD
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