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Solid camera device and camera

A technology of a solid-state imaging device and imaging unit, which is applied in solid-state image signal generators, image communications, and televisions, and can solve problems such as image quality degradation and color mixing

Active Publication Date: 2004-08-04
GK BRIDGE 1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, the output signal is temporally susceptible to adjacent signals, so color mixing is possible, resulting in image degradation

Method used

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  • Solid camera device and camera

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Experimental program
Comparison scheme
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Embodiment approach 1

[0034] FIG. 1 is a diagram showing configurations of a MOS solid-state imaging device 12 and an external circuit 9 in Embodiment 1 of the present invention. The same parts as those of the conventional device shown in FIG. 7 are denoted by the same reference numerals, and repeated explanations are omitted.

[0035] The structure of this solid-state imaging device 12 that is different from the conventional example shown in FIG. 7 is the horizontal shift register 13, and other parts are the same as those of the conventional example shown in FIG. 7 . The configuration of the external circuit 9 is also the same as that of the conventional example shown in FIG. 7 . In the pixel 1 of 12 in the solid-state imaging device, red (R), green (G), and blue (B) three primary color pixels 1 are arranged two-dimensionally, and the structure is the same as the conventional example. The horizontal shift register 13 of this embodiment differs from the conventional example in that when the image ...

Embodiment approach 2

[0043] FIG. 3 shows configurations of a MOS solid-state imaging device 15 and an external circuit 17 in Embodiment 2 of the present invention. The same parts as those of the conventional device shown in FIG. 7 are denoted by the same reference numerals, and repeated explanations are omitted.

[0044] The structure of this solid-state imaging device 15 is different from the conventional device shown in FIG. 7 in that it has two output signal lines 6a, 6b. Output amplifiers 7a, 7b are connected to the output signal lines 6a, 6b, respectively. Read switches 16a, 16b are interposed between the line memory section 4 and the output signal lines 6a, 6b. In addition, to the external circuit 17, the color selection switches 11a to 11c are connected according to the division corresponding to the output signals of the output amplifiers 7a and 7b.

[0045] In the pixel 1, the three primary colors of red (R), green (G), and blue (B) are arranged two-dimensionally as in the conventional e...

Embodiment approach 3

[0056] FIG. 5 is a diagram showing configurations of a MOS solid-state imaging device 18 and an external circuit 17 in Embodiment 3 of the present invention. The same parts as those of the conventional device shown in FIG. 7 are denoted by the same reference numerals, and repeated explanations are omitted.

[0057] The structure of this solid-state imaging device 18 is different from the conventional device shown in FIG. 7 in that it has two output signal lines 6a, 6b. Output amplifiers 7a, 7b are connected to the output signal lines 6a, 6b, respectively. Read switches 20a, 20b are interposed between the line memory section 4 and the output signal lines 6a, 6b. In addition, memory selection switches 19 a and 19 b are interposed between the vertical signal line 3 and the row memory section 4 . Each vertical signal line 3 is connected to a storage position (G) or a storage position (B / R) in the line memory section 4 so as to be switched by the memory selection switches 19 a an...

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Abstract

A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.

Description

technical field [0001] The present invention relates to a solid-state imaging device in which unit pixels are two-dimensionally arranged for photoelectric conversion of incident light, and cameras (including cameras) such as digital still cameras and video cameras using the solid-state imaging device. Background technique [0002] In a solid-state imaging device used in a conventional digital still camera, etc., the pixel signals obtained by each pixel for photoelectric conversion are, for example, transmitted row by row and stored in a storage unit; The read pulses output from the horizontal shift register are sequentially output synchronously (for example, refer to FIGS. 13 and 14 of JP-A-2001-45378). [0003] FIG. 7 shows the configurations of a conventional MOS type solid-state imaging device 8 (only a part is shown in the figure) and an external circuit 9 . A plurality of pixels 1 are arranged two-dimensionally on the solid-state imaging device 8 . A selection signal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/345H04N5/374H04N5/378H04N9/04
CPCH04N9/045H04N25/70H04N25/447H04N25/134
Inventor 山口琢己春日繁孝森三佳
Owner GK BRIDGE 1
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