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Differential MEMS accelerometer based on tunneling magneto-resistor array

An accelerometer and magneto-resistance technology, applied in the direction of acceleration measurement using inertial force, can solve the problem of low resolution, achieve the effects of improving output sensitivity, low energy consumption, and improving zero-drift stability

Inactive Publication Date: 2021-05-28
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current MEMS inertial navigation sensors are mainly based on the principle of comb-tooth capacitance, which has the defect of low resolution.

Method used

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  • Differential MEMS accelerometer based on tunneling magneto-resistor array
  • Differential MEMS accelerometer based on tunneling magneto-resistor array
  • Differential MEMS accelerometer based on tunneling magneto-resistor array

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Embodiment Construction

[0029] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the following specific embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention.

[0030] As shown in the figure, a differential MEMS accelerometer based on a tunneling magnetoresistance array according to the present invention includes the magnetic field generation and detection part of the lower layer, the magnetic field modulation part of the upper layer and the installation frame where the two parts are located, and the lower layer The overall structure is symmetrical about the lines A and B, and the upper layer is an overall micro-processed structure which is also symmetrical.

[0031] The installation method and position relationship between the specific structures: the magnetic field generation and detection part includes the excitation coil 2...

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Abstract

The invention discloses a differential MEMS accelerometer based on a tunneling magneto-resistor array. The differential MEMS accelerometer comprises a magnetic field generation and detection part on a lower layer, a magnetic field modulation part on an upper layer and an installation frame where the magnetic field generation and detection part and the magnetic field modulation part are located, the magnetic field generation and detection part comprises a magnet exciting coil, a tunneling magnetoresistor and a magnetic field collector, and a constant-intensity magnetic field can be generated and the change of the magnetic field influenced by a modulator can be detected; and a main body of the upper-layer magnetic field modulation part is a mass-flexible structure, and a magnetic field regulator is arranged on the lower surface of a mass block and can modulate a magnetic field. In addition, the accelerometer is also provided with a differential detection structure, so that the sensitivity can be improved, and the temperature noise can be reduced. According to the invention, an acceleration-magnetic field intensity-resistance signal conversion mode is adopted, the high change rate characteristic of the tunneling magnetoresistance is fully utilized to improve the acceleration detection efficiency, and meanwhile, an integration method is adopted in the process, so that the method has incomparable advantages in the aspects of precision and volume, and can be widely applied to the fields of high-precision inertial navigation and military industry.

Description

technical field [0001] The invention belongs to the technical field of circuit design, in particular to a differential MEMS accelerometer based on a tunneling magnetoresistance array. Background technique [0002] Tunneling magnetoresistance (TMR) is a magnetic field sensor that can convert the magnetic field strength into a resistance value, and can measure the magnetic field strength. It is made of magnetic tunnel junctions of multilayer materials, and its magnetic field sensitivity direction is parallel to the layers. This sensor has the advantages of high sensitivity and low noise, and can have a large resistance value change rate under weak magnetic field changes. [0003] Due to the superior performance of this magnetoresistance, in addition to the field of magnetic field detection, it can also be used in a variety of other fields, converting other signals into magnetic field signals, and then the tunneling magnetoresistance detects the change of the magnetic field to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/12
CPCG01P15/12
Inventor 梁金星唐琦
Owner SOUTHEAST UNIV
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