A protective semiconductor device

Abstract

The invention discloses a protective semiconductor device, which relates to a semiconductor device and solves the technical problems that the response speed, robustness and reliability of the protective semiconductor device are not fast enough under high voltage or high power, and the main points of the technical scheme It includes an N-type substrate region, a P-type anode region is arranged at the bottom of the N-type substrate region, a P-type base region is arranged on the top of the N-type substrate region, and a horizontally variable doping region is arranged in the P-type base region. Complex N-VLD region. Multiple electron-hole-electron-hole cycles can be formed between the N-VLD region and the P-type anode region, thereby forming a strong current between the anode and the cathode, and the dynamic current sharing effect of the N-VLD region Keep the working status of each cell highly consistent. Therefore, when there is a surge current in the external circuit, a very large current channel can be formed between the anode and the cathode by actively controlling the trigger electrode, which improves the ability of the device to pass the surge current and realizes the active protection of the circuit system.

Description

technical field [0001] The present disclosure relates to semiconductor devices, and in particular to a protective semiconductor device for high voltage and / or high power. Background technique [0002] Semiconductor protection devices are widely used in consumer electronics, white goods, industrial control, power electronics, and defense electronics. As an electronic component that releases excess voltage or current instantaneously, under normal conditions, the protective device is only an auxiliary component of the main circuit and does not participate in or affect the normal circuit function of the main circuit; only when the voltage across the protective device or flows through the protective device When the current of the device exceeds a certain threshold, the protection device enters the working state of breakdown clamp or latch, allowing the excess energy in the circuit to discharge from the bypass protection device, thereby achieving the purpose of protecting the main...

AI Technical Summary

Problems solved by technology

[0003] Since most of the protection devices are passive components, it is impossible to control their work in advance or delay, so they are not suitable for some application fields that need to actively discharge circuit energy; secondly, especially in the application of high voltage or high power protection, the protective semiconductor The response speed, robustness and reliability of the device put forward extremely stringent requirements, and the existing protection devices are difficult to meet the applications in these fields

The main reason is that semiconductor devices are often composed of thousands of smallest cell units arranged in parallel. Due to the influence of process deviation, lead parasitic parameters and other factors, it is extremely difficult to achieve consistent work of all cells in the device, so the huge Affect the dynamic performance of the device and reduce the safe operating area of ​​the device, and even cause the device to fail

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