A butt coupling method for monolithic integrated chips
A single-chip integration and docking coupling technology, applied in the field of docking coupling, can solve the problems of low coupling efficiency affecting the optical power of the device, affecting the transmission characteristics of the device, and poor refractive index, so as to improve the quality of docking coupling, improve growth quality, and reduce loss Effect
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[0040] The solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0041] This embodiment discloses a butt coupling method for monolithic integrated chips, including the following steps:
[0042] S1) if figure 1 , growing the first functional device on the substrate 1, including sequentially growing the first InP buffer layer 2, the quaternary optical field control layer 3, the second InP buffer layer 4, the first lower waveguide layer 5, and the first active quantum well Layer 6, first upper waveguide layer 7, first InP cladding layer 8;
[0043] Among them, the material composition of the quaternary optical field control layer 3 is 120-180nm different from the PL of the active MQW, and its function is to control the optical field of the first functional device in the active / passive waveguide of the second functional device to avoid The light leakage of the substrate can be used as an etching stop l...
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