A tri-gate component and an ion source containing the tri-gate component

Abstract

The invention discloses a three-grid assembly. The three-grid assembly comprises an inner grid, a middle grid and an outer grid which are parallelly arranged in sequence; the inner side of the inner grid is provided with an inner flange, and the inner grid is installed on the inner flange; the outer side of the outer grid is provided with an outer flange, and the outer grid is installed on the outer flange; insulated isolation pieces are arranged between the inner flange and the middle grid as well as between the outer flange and the middle grid in a clamping mode; and the middle grid is provided with stress absorption grooves used for absorbing thermal deformation. The invention further discloses an ion source. The ion source comprises an inner cover, a discharge chamber located in the inner cover, a cathode and an anode, and the cathode and the anode are located in the discharge chamber. The ion source further comprises the three-grid assembly, the inner flange in the three-grid assembly is closely attached to the discharge chamber, and the outer flange in the three-grid assembly is connected with the inner cover. The three-grid assembly and the ion source comprising the same have the advantages that the structure is simple, the cost is low, the distance between the grids is decreased advantageously, and the grids are prevented from deformation and short circuit.

Description

technical field [0001] The invention relates to ion beam sputtering coating equipment, in particular to a three-grid assembly and an ion source containing the three-grid assembly, which is especially suitable for low-energy and wide-beam extraction working conditions. Background technique [0002] Ion beam sputtering is one of the physical sputtering methods. As a new generation of thin film growth method, it has the characteristics of pure film material, high film density and strong adhesion, and has been widely used in semiconductor, thin film materials, optical components and other industries. [0003] Thin film deposition is divided into physical deposition and chemical deposition. Physical deposition is a purely physical action, which does not change the atomic structure and composition of the target and the deposited material. Just transfer the target material to the workpiece according to the same composition ratio and atomic (or molecular) structure. There are thr...

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Problems solved by technology

However, since the distance between the grids is very short (less than 2mm), and the inner grid is at the exit of the plasma, the temperature is high, which can easily lead to grid deformation and short circuit. In order to solve this problem, the conventional method is to increase the Increase the size of the three grids and increase the strength of the grid by adding parts on the outer periphery of the grid. Although this is beneficial to prevent the deformation of the grid, it will lead to a complex structure and a large increase in size. Further, the size of the reaction chamber also needs to be increased accordingly. Large, resulting in greatly increased equipment costs

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