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A kind of led chip and cutting method thereof

A technology of LED chips and cutting methods, which is applied in the direction of manufacturing tools, semiconductor devices, abrasive jet machine tools, etc., can solve the problems of low luminous efficiency of LED chips, abnormal photoelectric characteristics, and low yield rate, so as to improve the overall luminous efficiency and avoid edge The effect of cracking and yield improvement

Active Publication Date: 2021-01-26
YANGZHOU CHANGELIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides an LED chip and its cutting method to solve the problems of low luminous efficiency, abnormal photoelectric characteristics and low yield of LED chips obtained by the chip cutting method (scribing method) in the prior art.

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  • A kind of led chip and cutting method thereof
  • A kind of led chip and cutting method thereof
  • A kind of led chip and cutting method thereof

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Embodiment Construction

[0041] As mentioned in the background technology section, the LED chips obtained by the chip dicing method in the prior art have low luminous efficiency, abnormal photoelectric characteristics, and a low yield rate.

[0042] The inventors found that the reason for the above phenomenon is that the epitaxial layer of the LED wafer is mostly brittle materials such as AlGaInP, GaAs, GaP; The phenomenon of edge chipping and the generation of cutting residue; resulting in a decrease in yield. Moreover, the severity of cracking is closely related to the use status of the blade, which will cause inconsistency in the cutting quality of the product; and during the high-energy thermal processing of the laser, the high-temperature molten residue splashed out conducts the PN junction in the LED chip, causing the LED chip to leak electricity , In addition, because the black molten residue adhering to the side wall of the chip will block the emission of light, the overall luminous efficiency...

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Abstract

The present application discloses an LED chip and its cutting method. In the LED chip cutting method provided by the present invention, after making the cutting abrasive, the cutting abrasive is pressurized by the pressurization system in the water cutting machine to form a high-pressure cutting jet, so that the high-pressure cutting The jet acts on the surface of the LED wafer to achieve the purpose of cutting the LED wafer. Since the LED chip cutting method provided by the present invention is a cold cutting method, there will be no thermal influence during the cutting process, and no molten material similar to laser cutting will be generated, thereby effectively avoiding the LED chip leakage or being blocked by melting, which is beneficial to the LED side. The wall emits light, which improves the luminous efficiency of the LED chip. In addition, since the action of the high-pressure jet is fluid stress rather than mechanical stress, the phenomenon of edge cracking during chip cutting is avoided, and the yield rate of LED chips is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor chips, in particular to an LED chip and a cutting method thereof. Background technique [0002] The manufacture of LED (Light Emitting Diode, light-emitting diode) chips starts from a complete wafer, after a series of processes such as chemical cleaning, evaporation, photolithography, etc., and finally undergoes scribing and splitting processes, and becomes separated one by one. Chip; the current LED chip slicing methods used in the industry are mainly divided into two types: one is to use a hub-shaped blade embedded with diamond abrasives on the edge to cut the surface material of the LED chip under high-speed rotation; the other is The high-energy beam generated by the laser is used to melt the surface material of the LED chip and then sputter it to form a cutting line. [0003] However, the LED chips obtained by the chip dicing method in the prior art have low luminous effi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78H01L33/00B24C1/04B24C3/00
CPCB24C1/045B24C3/00H01L21/78H01L33/00
Inventor 石峰杜俊康徐洲赵鹏王涛
Owner YANGZHOU CHANGELIGHT
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