A broadband tunable moire grating laser and its working method
A working method and laser technology, applied in the field of lasers, can solve the problems of complex manufacturing process, high reliability performance, large device size, etc., and achieve the effect of broadband tuning
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Embodiment 1
[0041] A broadband tunable Moire grating laser such as figure 1 As shown, including the tuning region, phase region, and active region grown on the same substrate, the tuning region, phase region, and active region are sequentially coupled, the tuning region includes Moire gratings, and the Moire grating includes side-by-side grown on the same substrate Placed basic grating A1, basic grating A2;
[0042] The grating period of the basic grating A1 is Λ 1 =80nm, the grating period of the basic grating A2 is Λ 2 =60nm, the grating period Λ of the Moire grating is Λ=Λ 1 Λ 2 / (Λ 1 -Λ 2 ), Λ=240nm.
[0043] By changing the grating period of the basic grating A1 or the basic grating A2, Λ will change obviously, and then realize the broadband tuning of the Bragg wavelength, the grating period of the basic grating A1 is Λ 1 =80nm is fixed, the grating period Λ of the basic grating A2 2 with Bragg wavelength λ 0 relationship such as image 3 Shown; the grating period of the ba...
Embodiment 2
[0045] According to a kind of broadband tunable Moire grating laser described in embodiment 1, the structure of simulation modeling of broadband tunable Moire grating laser by Lumerical FDTD is as follows Figure 5 As shown, the grating is a structure with alternating refractive index periods, and n1 and n2 are the refractive index of the grating substrate material and the refractive index of the filling material after the substrate is etched, respectively. 0.23μm is the lateral width value of a single-sided grating; the fundamental mode TE mode light source used in FDTD simulation is as follows Figure 6 As shown, because it is generally necessary to ensure that only the TE fundamental mode exists in the semiconductor laser used for communication, this mode is also selected in the simulation; the materials of the basic grating A1 and the basic grating A2 are indium phosphide (InP). The refractive index n of the material of the basic grating A1 and the basic grating A2 eff is...
Embodiment 3
[0050] The working method of a kind of broadband tunable Moire grating laser described in embodiment 2 comprises: injection current I 3 acting on the piezoelectric material; I 3 The value of the piezoelectric material is 10mA. Due to the strong inverse piezoelectric effect of the piezoelectric material, the piezoelectric material will cause the current I 3 The deformation occurs in the direction, and the deformation of the piezoelectric material squeezes the basic grating A1 or basic grating A2 covered by it in the longitudinal direction, because indium phosphide (InP) itself has an elastic effect, the basic grating covered by the piezoelectric material A1 or the basic grating A2 expands in the transverse direction, then the grating period Λ of the basic grating A1 covered by the piezoelectric material 1 or basic grating A2 grating period Λ 2 The increase causes the grating period Λ of the Moire grating to change, and the change of the grating period Λ of the Moire grating l...
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