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A method for calculating the on-state loss of a modular multilevel converter power module

A modular multi-level, power module technology, used in output power conversion devices, AC power input conversion to DC power output, high-efficiency power electronic conversion and other directions, can solve rough problems, achieve accurate bridge arm current calculation, Accurate on-state loss calculation, accurate loss calculation effect

Active Publication Date: 2019-12-24
SHENZHEN AUTO ELECTRIC POWER PLANT
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Problems solved by technology

However, the existing on-state loss calculation method is too rough, and further improvement is still needed to obtain a more accurate loss calculation

Method used

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  • A method for calculating the on-state loss of a modular multilevel converter power module
  • A method for calculating the on-state loss of a modular multilevel converter power module
  • A method for calculating the on-state loss of a modular multilevel converter power module

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Embodiment Construction

[0044] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0045] Taking the Kangbao Station System of Zhangbei Project as an example for analysis. System structure such as Figure 4 The main parameters of the system are shown in Table 1.

[0046] Table 1 Main parameters of MMC system in Zhangbei Engineering Kangbao Station

[0047]

[0048] According to the main parameters of the system, choose to use the IGBT module of model 5SNA 3000K452300 produced by ABB Company. According to the device data sheet for Figure 5 , Figure 6 The characteristic curves of IGBT and FWD in are fitted once, and the data in Table 2 can be obtained.

[0049] Table 2 On-voltage drop and on-resistance of IGBT power module (at 125°C)

[0050]

[0051]

[0052] (Note: The fitting result is a linear function, that is, the conduction voltage drop is considered to be V(i)=V 0 +R 0 i)

[0053] In the embodiment of the pre...

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Abstract

The invention discloses a method for calculating on-state loss of a power module of a modularized multilevel converter, which comprises the following steps: 1) calculating the bridge arm current according to the electrical parameters and operating parameters of the MMC system; 2) calculating the bridge arm current according to the electrical parameters of the MMC system Calculate the double frequency component of the bridge arm circulation with the operating parameters, and correct the bridge arm current calculated in step 1); 3) calculate the equivalent current proportional coefficient ρ of each device in the bridge arm sub-module, and combine step 2 ) to obtain the bridge arm current, calculate the equivalent current average value and the mean square value of the device in the power frequency cycle; 4) extract the conduction characteristic parameters of the device, and combine the device equivalent current average value and the device equivalent current calculated in step 3) The mean square value calculates the on-state loss of the power module. Compared with the traditional loss calculation method, the invention can realize finer and more accurate on-state loss calculation, and provide reasonable basis for junction temperature evaluation and type selection of MMC sub-module devices.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a method for calculating on-state loss of a power module of a modularized multilevel converter. Background technique [0002] Modular Multilevel Converter (MMC) has been gradually used in flexible direct current transmission systems. It has the characteristics of flexible control, low switching frequency, and low harmonic content on the AC side. Currently, based on this technology, it is under construction The maximum transmission capacity of Zhangbei Rouzhi Project has reached ±500kV, 3000MW. The loss calculation of the converter power module is not only the basis of the heat dissipation design of the converter, but also used to measure the performance of the flexible DC transmission system. [0003] MMC uses insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) as the core device, and the loss of MMC mainly includes the loss of power...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/797
CPCH02M7/797H02M1/0054Y02B70/10
Inventor 王跃尹诗媛周晖王璋尹太元段国朝
Owner SHENZHEN AUTO ELECTRIC POWER PLANT
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