Plasma treatment device

Abstract

A plasma processing device is disclosed. The plasma processing device includes: a chamber having a space to generate the plasma and a chuck fixated on a bottom end of an upper end wall section; a first clamp device installed in the upper end wall section of the chamber, having a first clamp where a substrate tray is seated and able to vertically slide inside the chamber to enable the substrate tray to come in contact with the chuck to be fixated when the first clamp device rises; and a second clamp device installed in the upper end wall section of the chamber and able to vertically slide inside the chamber covering the first clamp and the substrate tray, and enabling the first clamp and the substrate tray to closely be attached to the chuck together when the second clamp rises.

Description

technical field [0001] The present invention is used to firmly fix a substrate tray inside a plasma processing device, and particularly relates to a plasma processing device that can be applied to a plasma processing device in which plasma is formed in the lower part of a chamber, and the substrate tray is fixed in the chamber . Background technique [0002] In general, etching and deposition methods using plasma are used in wafers used for semiconductors and thin film processing processes requiring precision, to improve the precision of products. [0003] A plasma processing apparatus that generates plasma in this way is composed of an externally shaped chamber, an antenna attached to the outside of the chamber, and a chuck for placing a wafer inside the chamber. [0004] Thus, the antenna supplies high frequency, and plasma is formed inside the chamber by the high frequency, and the wafer placed on the chuck is processed. [0005] In a conventional plasma processing appa...

AI Technical Summary

Problems solved by technology

The problem with this is that the process by-products generated in the upper part of the chamber fall to the substrate by gravity, so the process by-products affect the process of the substrate, and the etching operation cannot be carried out smoothly, resulting in defective parts.

However, such prior literature only discloses that high-frequency power is connected between parallel plate electrodes to generate plasma, and that the process gas is activated by means of the plasma, and a predetermined film formation is performed at a relatively low temperature. processing or etching, no disclosure is made regarding the means to securely hold the substrate tray inside the chamber

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