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A laser drilling method for amorphous silicon solar cell glass substrate

A technology of laser drilling and glass substrates, which is applied in the direction of laser welding equipment, circuits, electrical components, etc., and can solve the problems of easily polluting the membrane surface and high equipment costs

Active Publication Date: 2016-09-14
HANS LASER TECH IND GRP CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a laser drilling method for glass substrates of amorphous silicon solar cells to solve the problems of high equipment cost and easy contamination of the film surface in the existing process

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  • A laser drilling method for amorphous silicon solar cell glass substrate
  • A laser drilling method for amorphous silicon solar cell glass substrate

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Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0020] Such as figure 1 , 2 As shown, the embodiment of the present invention provides a laser drilling method for the glass substrate of an amorphous silicon solar cell. The film surface of the glass substrate 12 coated with the film layer 11 is placed upwards, and then from the edge of the through hole 13 to be drilled to the The film layer in a circular ring 14 is removed, and then in the circular ring where the film layer is removed, the laser drills holes in layers upward from the lower surface of the glass substrate.

[0021] In this embodiment, the plated film layer has three layers a, b, ...

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Abstract

The invention belongs to the field of amorphous silicon solar cell drilling and provides a laser drilling method for an amorphous silicon solar cell glass substrate. The laser drilling method comprises the steps that firstly, a membrane face of the glass substrate coated with a membrane layer is upward, and a membrane layer within a round ring is removed inwards from the edge of the portion to be drilled; secondly, within the round ring without the membrane layer, layered laser drilling is conducted on the lower surface of the glass substrate. By the adoption of the laser drilling method, the membrane face of the amorphous silicon solar cell glass substrate is placed on a processing production line, the membrane layer within the round ring is removed through laser, and drilling is conducted along the track of the hypocycloid in a layered mode; in this way, the equipment cost is reduced, production line processing of amorphous silicon solar cell glass substrates is guaranteed, and the membrane face of the membrane layer is prevented from being polluted.

Description

technical field [0001] The invention belongs to the field of drilling holes for amorphous silicon solar cells, in particular to a laser drilling method for glass substrates of amorphous silicon solar cells. Background technique [0002] With the increasingly serious problems of global energy shortage and environmental pollution, solar photovoltaic power generation has become an emerging industry that is widely concerned and focused on development because of its clean, safe, convenient, and high-efficiency characteristics. However, my country is rich in solar energy resources, and the land area suitable for solar power generation and the light-receiving area of ​​buildings are large. At present, the total area of ​​buildings with green building evaluation marks in China is less than 40 million square meters, and there is huge space for the development of green buildings in the future. [0003] Building Integrated Photovoltaics (BIPV) is suitable for most buildings, such as fl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B23K26/382B23K26/402
Inventor 王振华谢建郑付成邹建军黄东海黄秋香张峻诚高云峰
Owner HANS LASER TECH IND GRP CO LTD
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