Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Implementation method of high dynamic star sensor based on emccd and cmos

A CMOS sensor and star sensor technology, applied in the field of star sensors, can solve the problems of large volume, high power consumption, short life, etc., achieve long integration time, improve signal-to-noise ratio, and avoid the effect of star map blurring

Inactive Publication Date: 2017-01-25
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention solves the problems of high-speed acquisition of star maps by ICCD in the prior art, such as large volume, short life, high power consumption, etc., or the problem that the star map cannot satisfy high resolution and high frame frequency at the same time by using EMCCD. At the same time, the existing TDI In order to solve problems such as two-dimensional accumulative integration cannot be realized by the traditional method, an implementation method of a high dynamic star sensor based on EMCCD and CMOS is provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Implementation method of high dynamic star sensor based on emccd and cmos

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] combine figure 1 Describe this embodiment, the realization method based on the high dynamic star sensor of EMCCD and CMOS, this method is realized by the following steps:

[0013] 1. The star map in the sky is imaged on the large CMOS sensor and its four small EMCCD sensors at the four corners after being imaged by the optical system; the four small EMCCD sensors obtain the star map of high magnitude by multiplying the high frame rate such as 1000 frames per second. And send the star map data into the image processor; the image processor comprehensively processes the star maps sent by four EMCCDs, and calculates the current image movement speed in the two-dimensional direction;

[0014] 2. The CMOS sensor takes pictures at a higher frame rate such as 100 frames per second, and sends the collected star map to the image processor; the image processor calculates the image movement of each frame of the four EMCCDs based on the star maps of the four EMCCDs. By accumulating ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The implementation method of the high dynamic star sensor based on EMCCD and CMOS involves a star sensor technology, which solves the problems of large volume, short life and high power consumption in the existing technology of using ICCD to obtain star maps at high speed or using EMCCD to obtain star images The image cannot meet the problems of high resolution and high frame rate at the same time, and the existing TDI method cannot realize two-dimensional cumulative integration and other problems. A high-resolution and high-sensitivity CMOS detector is used to acquire multiple low The star map of the star magnitude reduces the number of stars in the star library of the star sensor; in view of the blurred star image caused by excessive motion speed under high dynamic conditions, the four-chip EMCCD multiplication mode at the four corners of the CMOS is used to shoot high-magnitude images at high speed to improve the acquisition of motion The probability of the vector, using the software method to realize the TDI working mode of the CMOS two-dimensional direction according to the obtained motion vector. The invention avoids the problem that the probability of image motion acquired by a single chip is too low.

Description

technical field [0001] The invention relates to a star sensor technology, in particular to a method for realizing a high-precision and high-dynamic star sensor based on EMCCD and CMOS. Background technique [0002] The star sensor is a high-precision attitude-sensitive measuring instrument, which has the advantages of high precision, strong anti-interference, and independent navigation without relying on other systems. Nowadays, domestic spacecraft mostly use imported foreign low-precision star sensors. With the deepening of aerospace applications, higher and higher requirements are put forward for their accuracy and dynamic performance. Due to the embargo of high-grade products abroad, they can only rely on their own Strength developed. The invention provides a combined high-dynamic star sensor imaging system based on high-resolution CMOS and low-resolution electronic multiplying charge-coupled device (EMCCD, Electronic Multiplying CCD). The basic working principle of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01C25/00
CPCG01C21/24
Inventor 余达周怀得李广泽刘金国徐东王国良张博研
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com