Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multilayer homogeneous growth bismuth ferrite thin-film material and preparation method thereof

A thin film material, bismuth ferrite technology, applied in metal material coating process, coating, vacuum evaporation plating and other directions, can solve the problems of low structural density, reduced ferroelectric performance, limited application prospects, etc. And the effect of surface property optimization, surface property improvement, and strong controllability

Inactive Publication Date: 2014-03-26
EAST CHINA NORMAL UNIV
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, impurity phases are prone to appear in the samples prepared by traditional methods, the structure density is not high and the surface pores are more, which leads to the decrease of ferroelectric properties, which greatly limits its application prospects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer homogeneous growth bismuth ferrite thin-film material and preparation method thereof
  • Multilayer homogeneous growth bismuth ferrite thin-film material and preparation method thereof
  • Multilayer homogeneous growth bismuth ferrite thin-film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] In this embodiment, the specific preparation steps of the multilayer homogeneously grown bismuth ferrite film material are as follows:

[0035] a. The lanthanum nickelate thin film was first prepared at room temperature by magnetron sputtering;

[0036] b, then annealing is carried out in a rapid thermal annealing furnace, the annealing temperature is 650°C, the sputtering chamber pressure is 2.4pa, the sputtering power is 80W, the sputtering time is 40 minutes, and the ratio of argon and oxygen is 20:0 to obtain nickel acid Lanthanum thin film electrode material, the resistance meets the electrode requirements;

[0037] c. 99% Bi 2 o 3 and 99% Fe 2 o 3 Weigh and pour it into a ball mill jar with a molar ratio of 1.05:1, pour in an appropriate amount of deionized water, and mill it in a ball mill for 20 hours, take it out and dry it, pour it into a mortar, and grind it for 15-20 minutes.

[0038] d, and then mix the Bi 2 o 3 and Fe 2 o 3 The powder was pre-fired ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a multilayer homogeneous growth bismuth ferrite thin-film material, including a bottom electrode and a bismuth ferrite thin-film. The bottom electrode is a lanthanum nickelate thin-film, and the bismuth ferrite thin-film is sputtered and grows on the bottom electrode. The invention also discloses a preparation method of the multilayer homogeneous growth bismuth ferrite thin-film material. The method is as below: preparing the bottom electrode by a magnetron sputtering method on a silicon substrate, and preparing the bismuth ferrite thin-film by a solid state method; sputtering a layer of the bismuth ferrite thin film on the bottom electrode, rapidly annealing and repeating the above sputtering process for 6-8 times; and finally, conducting slow annealing treatment to obtain the multilayer homogeneous growth bismuth ferrite thin-film. The bismuth ferrite thin-film obtained by the invention has good uniformity, high purity, good compactness and significantly improved surface properties. The method provided by the invention utilizes magnetron sputtering method, which has strong controllability and is easy for operation and capable of precise control of film thickness.

Description

technical field [0001] The invention relates to the technical field of piezoelectric materials, ferroelectric materials and devices, in particular to a multilayer homogeneously grown bismuth ferrite film material and a preparation method thereof. Background technique [0002] Bismuth ferrite (BiFeO 3 ) is a single-phase magnetoelectric multiferroic material with an oblique hexagonal perovskite structure, belonging to the R3c space group, and its unit cell parameter a=59.35°, it is one of the very few known materials that exhibit both ferroelectricity (Curie temperature 1103K) and G-type antiferromagnetism (Nell temperature 643K) at room temperature. Due to BiFeO 3 The material does not contain lead, which is beneficial to environmental protection and human health, so it is considered to be an ideal substitute for lead zirconate titanate (PZT) materials, which are widely used in commercial manufacturing, and provides a new direction for people to study materials for new st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58
Inventor 严胡睿周文亮杨平雄褚君浩
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com