A method and device for preparing a p-type doped amorphous silicon thin film

A technology of amorphous silicon thin film and preparation device, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, ion implantation and plating, etc., can solve the problem of low doping efficiency of P-type amorphous silicon thin film and low doping efficiency thin film defects And other issues

Active Publication Date: 2016-03-09
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the problem of low doping efficiency of P-type amorphous silicon thin films prepared by boron doping in the prior art, the present invention proposes a method and device for preparing P-type amorphous silicon thin films with high doping efficiency and low film defects. Used as a window layer material for silicon-based thin-film solar cells to achieve a significant increase in cell efficiency

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  • A method and device for preparing a p-type doped amorphous silicon thin film
  • A method and device for preparing a p-type doped amorphous silicon thin film
  • A method and device for preparing a p-type doped amorphous silicon thin film

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Embodiment 1

[0015] (1) adopt figure 1 In the shown device, the distance between the tantalum wire 2 and the substrate plate 5 is 10 cm, the angle between the surface normal of the ceramic crucible 6 and the plane of the substrate plate 5 is 80° C., and the aluminum source used in the thermal reaction evaporator 7 is 99.9999% aluminum purity;

[0016] (2) Put the AZO conductive glass on the substrate plate 5 in the vacuum chamber 1, and use the vacuum pump 11 to evacuate the vacuum chamber so that the vacuum degree of the vacuum chamber is 1×10 -4 Pa, and the temperature of the substrate plate 5 is controlled to be 200° C. by the substrate heater 9;

[0017] (3) Feed the mixed reaction gas hydrogen and silane into the vacuum chamber at the same time, the flow ratio of hydrogen and silane is 1:1, apply voltage to the tantalum wire 2 to heat, so that the temperature of the tantalum wire 2 reaches 1750°C, and the flow rate of the gas is controlled Make the pressure of the reaction gas in th...

Embodiment 2

[0022] (1) adopt figure 1 In the shown device, the distance between the tantalum wire 2 and the substrate plate 5 is 12 cm, the angle between the surface normal of the ceramic crucible 6 and the substrate plate plane is 75° C., and the purity of the aluminum source used in the thermal reaction evaporator 7 is 99.9999% Aluminum;

[0023] (2) Put the AZO conductive glass on the substrate plate 5 of the vacuum chamber 1, and use the vacuum pump 11 to evacuate the vacuum chamber so that the vacuum degree of the vacuum chamber is 1×10 -4 Pa, and the temperature of the substrate plate 5 is controlled to be 200° C. by the substrate heater 9;

[0024] (3) Feed the mixed reaction gas hydrogen and silane into the vacuum chamber at the same time, the flow ratio of hydrogen and silane is 1.2:1, apply voltage to the tantalum wire 2 to heat, so that the temperature of the tantalum wire 2 reaches 1700 ° C, through the flow control of the gas Make the pressure of the reaction gas in the vac...

Embodiment 3

[0029] (1) adopt figure 1 In the shown device, the distance between the tantalum wire 2 and the substrate plate 5 is 15 cm, the angle between the surface normal of the ceramic crucible 6 and the substrate plate plane is 85° C., and the purity of the aluminum source used in the thermal reaction evaporator 7 is 99.9999% Aluminum;

[0030] (2) Put the AZO conductive glass on the substrate plate 5 in the vacuum chamber 1, and use the vacuum pump 11 to evacuate the vacuum chamber so that the vacuum degree of the vacuum chamber is 1×10 -4 Pa, and the temperature of the substrate plate 5 is controlled to be 200° C. by the substrate heater 9;

[0031] (3) Feed the mixed reaction gas hydrogen and silane into the vacuum chamber at the same time, the flow ratio of hydrogen and silane is 1.5:1, apply voltage to the tantalum wire 2 to heat, so that the temperature of the tantalum wire 2 reaches 1750°C, and the flow rate of the gas is controlled Make the pressure of the reaction gas in the ...

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Abstract

The invention discloses a method and device for preparing a P-type amorphous-silicon-doped thin film. The device comprises a vacuum chamber, and a substrate plate, a substrate heater and a substrate baffle plate are arranged in the vacuum chamber. The bottom of the vacuum chamber is connected with a vacuum pump, and a metal tantalum wire electrically connected with a direct-current power supply and a gas inlet channel of reaction gases are arranged above the vacuum chamber. A thermal reaction evaporator is arranged at the side wall of the vacuum chamber, and the outlet of the thermal reaction evaporator is connected with a ceramic crucible. An included angle between the surface normal of the ceramic crucible and the plane of the substrate plate is 75-85 DEG C, the vertical distance from the mouth of the ceramic crucible to substrate plate is 5-8 cm, and the distance from the tantalum wire to the substrate plate is 10-15 cm. The effect of ion bombardment does not exist, and the film surface damage and internal defects of the amorphous-silicon thin film cannot be caused. The aluminum doping content is controlled by regulating the temperature of the tantalum wire subjected to thermal reaction evaporation, and the doping concentration is effectively controlled.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a method and device for preparing a P-type doped amorphous silicon thin film. Background technique [0002] In silicon-based thin-film solar cell devices, the P-I-N type structure mode is adopted, and the quality of the P-type doped amorphous silicon window layer material has an important impact on the performance of the entire silicon-based thin-film solar cell. In silicon-based thin-film solar cells , in order to reduce the series resistance and reduce the loss of incident light, the P layer window material is required to have high electrical conductivity and wide optical band gap, etc. Improving the optical and electrical properties of the P layer thin film material is an effective way to improve the performance of thin film solar cells . The usual method of preparing P-type amorphous silicon thin films is to use plasma enhanced chemical vapor deposition (PECVD)...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/24C23C14/26C23C14/04H01L31/18H01L31/20
CPCY02P70/50
Inventor 彭寿王芸马立云崔介东
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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