Method for preparing graphene chemically modified electrode through in-situ growth
An in-situ growth and chemical modification technology, applied in the direction of material electrochemical variables, can solve the problems of complex preparation process, destruction of unique structure, and influence on the detection performance of graphene, achieving high preparation efficiency, simple operation, and suitable for large-scale production Effect
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Embodiment 1
[0032] A specific embodiment of the present invention is a method for preparing graphene chemically modified electrode by in-situ growth, the steps of which are:
[0033] A. Cleaning of the substrate
[0034] The quartz glass pieces were sequentially placed in acetone, absolute ethanol and secondary deionized water for ultrasonic cleaning for 10 minutes respectively to remove oil stains and other impurities on the surface; then, the quartz glass pieces were dried in a blast drying box.
[0035] B. In-situ growth of graphene
[0036] Place the quartz glass sheet obtained in step A in a clean quartz boat, and place the quartz boat in the quartz tube of a horizontal resistance furnace; first pass argon to remove the oxygen in the quartz tube, and then under the protection of argon, Heat the quartz tube to 900°C; then keep it for 10 minutes, and switch through acetylene and hydrogen while keeping the temperature. The volume ratio of acetylene and hydrogen is 1:10; then, cool to room tempe...
Embodiment 2
[0049] The method of this example is basically the same as the preparation method of Example 1, except that:
[0050] The substrate used in step A is SiO 2 / Si film.
[0051] The carbon source gas used in step B is methane, and the volume ratio of methane to hydrogen is 1:1; the growth temperature of graphene is 1200° C.; and the growth time is 1 min.
Embodiment 3
[0053] The method in this example is basically the same as the preparation method in Example 1, except that:
[0054] The carbon source gas used in step B is ethylene, and the volume ratio of ethylene to hydrogen is 1:50; the growth temperature of graphene is 600° C.; and the growth time is 180 min.
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