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Method for preparing graphene chemically modified electrode through in-situ growth

An in-situ growth and chemical modification technology, applied in the direction of material electrochemical variables, can solve the problems of complex preparation process, destruction of unique structure, and influence on the detection performance of graphene, achieving high preparation efficiency, simple operation, and suitable for large-scale production Effect

Inactive Publication Date: 2014-01-22
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for better control over how well chemical modifications occur at specific locations within an electrified material (electrodes) without damaging them or affecting their properties. It simplifies the manufacturing processes by allowing direct formation of new layers onto the surface instead of relying solely upon previous methods like adding carbon nanotubes into solution. Additionally, this technique makes it possible to create highly sensitive detectors that work even when they have been previously exposed to harmful substances such as organic solvents used in liquid chromatography analysis.

Problems solved by technology

The technical problem addressed in this patented text relates to how to efficiently separate small pieces (graphene) from large sheets of material like graphites without damaging their original properties such as electrical conduction and electronic motion ability. Current methods involve expensive processes involving physical manipulation techniques which can damage them during production.

Method used

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  • Method for preparing graphene chemically modified electrode through in-situ growth
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  • Method for preparing graphene chemically modified electrode through in-situ growth

Examples

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Embodiment 1

[0032] A specific embodiment of the present invention is a method for preparing graphene chemically modified electrode by in-situ growth, the steps of which are:

[0033] A. Cleaning of the substrate

[0034] The quartz glass pieces were sequentially placed in acetone, absolute ethanol and secondary deionized water for ultrasonic cleaning for 10 minutes respectively to remove oil stains and other impurities on the surface; then, the quartz glass pieces were dried in a blast drying box.

[0035] B. In-situ growth of graphene

[0036] Place the quartz glass sheet obtained in step A in a clean quartz boat, and place the quartz boat in the quartz tube of a horizontal resistance furnace; first pass argon to remove the oxygen in the quartz tube, and then under the protection of argon, Heat the quartz tube to 900°C; then keep it for 10 minutes, and switch through acetylene and hydrogen while keeping the temperature. The volume ratio of acetylene and hydrogen is 1:10; then, cool to room tempe...

Embodiment 2

[0049] The method of this example is basically the same as the preparation method of Example 1, except that:

[0050] The substrate used in step A is SiO 2 / Si film.

[0051] The carbon source gas used in step B is methane, and the volume ratio of methane to hydrogen is 1:1; the growth temperature of graphene is 1200° C.; and the growth time is 1 min.

Embodiment 3

[0053] The method in this example is basically the same as the preparation method in Example 1, except that:

[0054] The carbon source gas used in step B is ethylene, and the volume ratio of ethylene to hydrogen is 1:50; the growth temperature of graphene is 600° C.; and the growth time is 180 min.

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Abstract

The invention discloses a method for preparing a graphene chemically modified electrode through in-situ growth, which mainly comprises the following steps: (A) substrate cleaning; (B) in-situ growth of graphene: placing the substrate obtained by the step (A) in a clean quartz boat, and placing the quartz boat in a quartz tube of a horizontal resistance furnace; introducing argon to remove oxygen in the quartz tube; under the protection of the argon, heating the quartz tube to the growth temperature of graphene; preserving heat for 1-180 minutes while introducing carbon source gas and hydrogen instead; then, cooling to room temperature under the protection of argon, and taking out a product to obtain a substrate with in-situ grown graphene; (C) connecting the substrate with graphene of in-situ growth, obtained by the step (B), with a wire or directly putting the substrate into a clamp to obtain the graphene chemically modified electrode. The preparation process of the method is simple, the preparation efficiency is high, and the method is suitable for large-scale production; the prepared graphene chemically modified electrode has good quality and excellent detection performance.

Description

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Claims

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Application Information

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Owner SOUTHWEST JIAOTONG UNIV
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