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Methods for manufacturing dielectric layer and organic electroluminescent device

A manufacturing method and dielectric layer technology, applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as loss and inability to excite surface plasma waves

Inactive Publication Date: 2012-07-11
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For excitation light of a certain frequency, the wave vector of the surface plasmon wave is always larger than the incident light wave, so the surface plasmon wave propagating along the interface cannot be excited by simply using light waves
In general, the energy of surface plasmons will be quickly converted into non-radiative heat energy and lost, which leads to about 40% of the light generated by OLEDs being lost by surface plasmons

Method used

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  • Methods for manufacturing dielectric layer and organic electroluminescent device
  • Methods for manufacturing dielectric layer and organic electroluminescent device
  • Methods for manufacturing dielectric layer and organic electroluminescent device

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Embodiment Construction

[0040] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0042] See figure 1 , figure 1 It is a schematic structural view of the dielectric layer of the organic electroluminescent device of the present invention, and the dielectric layer includes: a dielectric layer body 20 and metal nanostructure particles 21 inside the dielectric layer body 20 .

[0043] The diel...

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Abstract

The invention discloses methods for manufacturing a dielectric layer and an organic electroluminescent device. The method for manufacturing the dielectric layer comprises the following steps of: synthesizing a metallic nanostructure particle solution by using a chemical method; mixing the metallic nanostructure particle solution with a body, and stirring the mixed solution by heating at low temperature; and spin-coating the mixed solution on a substrate material by using a spin-coating method so as to obtain the dielectric layer after the mixed solution becomes a film. According to the organic electroluminescent device, a cavity transmission layer is formed by using the dielectric layer, and through a resonance enhancement of the resonant peak of plasmas on surfaces of metallic nano-particles in the dielectric layer and the emission peak of the organic electroluminescent device, the photoelectric properties of the device are optimized, and the luminescent efficiency of the device is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor luminescence, in particular to a preparation method of an organic electroluminescent device and a dielectric layer thereof. Background technique [0002] Organic electroluminescent device (OLED) technology has the following advantages: 1. Simple manufacturing process; 2. It can be made into a flexible substrate, which is easy to bend; 3. Light and thin, with a larger viewing angle; 4. It can significantly save power Wait. Therefore, this technology has great application prospects in lighting and flat panel display. For organic electroluminescent devices, their luminous efficiency has been widely studied. Since the general fluorescent material emits light in a singlet state, the internal quantum efficiency of the OLED is theoretically limited to only 25%. Currently, the internal quantum efficiency has been increased to theoretically 100% by utilizing guest doping of phosphorescent material...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/52
Inventor 唐建新肖艳杨金彭李艳青
Owner SUZHOU UNIV
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