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Marking method and initialization method for a non-volatile memory array

An initialization method and technology of a memory array, applied in the field of marking and initialization for a non-volatile memory array, can solve the problem that the memory array cannot conform to good products, normally accessible pages or bytes cannot be used, written Action failure, etc.

Active Publication Date: 2015-12-16
FUGU TECH ENTERPRISE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the block as a whole is judged to be abnormal and discarded, other normally accessible pages or bytes in the block will also be unusable
In this way, the memory array may fail to meet the standard of good products; even if the memory array is finally judged to meet the standard, it will also cause low utilization due to discarding other pages or bytes that can be accessed normally
[0007] 2. When a block is judged as abnormal and needs to be written with a damage mark, it may be because the byte of the damage mark is written, which happens to be an abnormal byte, causing the write action to fail
Therefore, when the controller accesses the block judged to be abnormal for the first time, it misjudges the block as normal because it cannot read the damage flag.
[0008] 3. If data loss occurs in the byte storing the damage mark, the damage mark disappears, which will also cause the controller to misjudge the area that was originally judged to be abnormal because the damage mark cannot be read. block as normal
Afterwards, the controller will also use the area that was misjudged as normal because it cannot read the damage mark
[0010] 5. There may be a crosstalk effect between bytes. When the damage mark is written into a block that is judged to be abnormal, it will also affect other bytes. If the byte happens to be the block of another block Pre-marking the position will cause the controller to misjudge the normal block as abnormal

Method used

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  • Marking method and initialization method for a non-volatile memory array
  • Marking method and initialization method for a non-volatile memory array
  • Marking method and initialization method for a non-volatile memory array

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Embodiment Construction

[0033] see figure 1 Shown is a preferred embodiment of the marking method for a non-volatile memory array of the present invention. Wherein, the volatile memory array to which the marking method is applied includes a plurality of storage units (or data writing units), and each storage unit includes a plurality of bytes.

[0034] Please refer to figure 2 As shown, a non-volatile memory array 1 is taken as an example for illustration. The non-volatile memory array 1 includes a plurality of storage units 111, and each storage unit 111 includes a plurality of bytes. For example, each storage unit 111 of this embodiment can be a page (page), each page includes 4224 bytes, and 128 pages (P 1 ~P 128 ) can be combined and defined as a block (block)11, and 4096 blocks (B 1 ~B 4096 ) then further form the non-volatile memory array 1. In other words, the nonvolatile memory array 1 contains 4096×128=524288 storage units 111 (pages) in total.

[0035] Please refer to image 3 As ...

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Abstract

The invention provides a marking method and initializing method for a non-volatile memory array. The non-volatile memory array comprises a plurality of storage units; and each storage unit comprises a plurality of bytes. The marking method comprises the following steps of: judging whether the bytes of each storage unit can be read normally; and writing a mark into the storage unit. The initializing method comprises the following steps of: reading the mark of each storage unit; judging whether the mark accords with a pre-set value; recording the storage units with the marks which accord with the pre-set value into an identification list; and removing the marks.

Description

technical field [0001] The invention relates to a marking method and an initialization method, in particular to a marking method and an initialization method for a non-volatile memory. Background technique [0002] Generally speaking, a non-volatile memory array (non-volatile memory array) is composed of multiple blocks, each block contains multiple pages, and each page contains multiple bytes. (byte). [0003] In existing memory arrays, a page is used as a data writing unit, and a block is used as a data erasing unit. That is to say, each page of a block can write a piece of data separately, but if the data of one page needs to be erased, the data of other pages of the block must be erased together. Therefore, when a certain page of a block is abnormal (cannot be accessed normally), the data erasure of the block cannot be performed, and the block should not be used, so as to avoid problems such as data reading errors or disappearance. [0004] Usually, after a memory arr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06G11C16/20
Inventor 林景洋
Owner FUGU TECH ENTERPRISE
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