Printable semiconductor structures and related methods of making and assembling

A semiconductor and overall technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as destruction, cracking, and damage

Active Publication Date: 2011-09-07
THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, although many amorphous silicon, organic or hybrid organic-inorganic semiconductors can be compatible incorporated into plastic substrates and can be processed at relatively low temperatures, these materials do not have the integration capabilities that would provide good electronic properties. Electronic Characteristics of Electronic Devices
This mechanical stress can lead to damage to individual components, such as cracking, and can also degrade or break electrical contacts between device components

Method used

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  • Printable semiconductor structures and related methods of making and assembling
  • Printable semiconductor structures and related methods of making and assembling
  • Printable semiconductor structures and related methods of making and assembling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0107] Example 1 Aligned GaAs line arrays for flexible transistors, diodes and circuits printed on plastic substrates

[0108] GaAs line-aligned arrays with integrated ohmic contacts produced from high-quality single-crystal wafers using photolithography and anisotropic chemical etching provide a promising transistor for use on flexible plastic substrates, Materials for Schottky diodes, logic gates, and even more complex circuits. These devices exhibit excellent electrical and mechanical properties, both of which are important for the emerging field of low-cost, large-area flexible electronics, often called macroelectronics.

[0109] Micro- and nano-scale wires, ribbons, platelets, etc. of single-crystalline inorganic semiconductors are attractive for functional devices (e.g., optical devices, optoelectronic devices, electronic devices, sensor devices, etc.) that can be used in many applications. The building block of force. For example, Si nanowires synthesized by a "bottom...

Embodiment 2

[0121] Example 2: Gigahertz operation of a mechanically flexible transistor on a flexible plastic substrate

[0122] The combined use of GaAs wires with ohmic contacts formed from bulk wafers, soft lithographic transfer printing techniques, and optimized device designs enables the formation of mechanically flexible transistors on low-cost plastic substrates with individual device speeds in the gigahertz range and with High mechanical bendability. The methods disclosed herein include materials that are fabricated with limited lithographic image forming resolution and registration in a simple layout. This example describes the electrical and mechanical properties of high performance transistors. These results are of great importance in certain applications including, but not limited to, high-speed communications and computing, and emerging types of large-area electronic systems ("macroelectronic devices").

[0123] Large-area flexible electronic systems (ie, macroelectronic de...

Embodiment 3

[0145] In summary, the results of this example show that surface stresses (up to 0.71% in tension and compression) induced by bending do not significantly degrade the performance of MESFETs fabricated by the modified process. More importantly, releasing the sample in the bent state restored the device performance to its original state. These observations indicate that GaAs wire-based MESFETs on PU / PET substrates have mechanical properties that meet the requirements for many envisioned macroelectronic device applications. In addition, these types of TFTs exhibit high speeds approaching those suitable for RF communications equipment and other applications requiring mechanical flexibility, lightweight construction, and compatibility with large-area, printing-like processing. speed. GaAs has some of the same disadvantages as Si used in conventional integrated circuits (i.e. high wafer cost) for devices using thin, bendable wires or ribbons of suitable density and large area circu...

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PUM

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Abstract

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and / or nanosized semiconductor structures onto substrates, including large area substrates and / or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Description

[0001] This application is a divisional application of the invention patent application 200680019640.0 entitled "Printable Semiconductor Structure and Related Manufacturing and Assembly Methods", which entered the Chinese national phase on December 3, 2007. [0002] Cross-references to related applications [0003] This application claims U.S. Patent Application No. 11 / 145,542, filed June 2, 2005, U.S. Patent Application No. 11 / 145,574, filed June 2, 2005, and International PCT Application No. .PCT / US05 / 19354 priority, hereby incorporated by reference, to the extent not inconsistent with the disclosure herein, the contents of all of these applications. technical field [0004] The present invention relates to printable semiconductor structures and related fabrication and assembly methods. Background technique [0005] Since the first demonstration of printed all-polymer transistors in 1994, potential new types of electronic systems that include flexible integrated electroni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/16H01L29/04H01L29/786H01L21/302H01L21/20H01L21/58H01L21/77
CPCH01L2924/0002
Inventor R·G·纳佐J·A·罗杰斯E·梅纳德李建宰姜达荣孙玉刚M·梅尔特朱正涛高興助S·麦克
Owner THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
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