Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fault correcting method for gray tone mask, gray tone mask and manufacturing method thereof

A gray-scale mask and defect technology, which is applied to the photo-engraving process of the pattern surface, the originals for opto-mechanical processing, optics, etc., and can solve the problems of lower production efficiency, defectiveness, and lower detection efficiency of liquid crystal display devices.

Inactive Publication Date: 2013-03-13
HOYA CORP +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the detection efficiency is lowered, and the production efficiency of the liquid crystal display device is lowered, which is a manufacturing defect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fault correcting method for gray tone mask, gray tone mask and manufacturing method thereof
  • Fault correcting method for gray tone mask, gray tone mask and manufacturing method thereof
  • Fault correcting method for gray tone mask, gray tone mask and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0062] figure 1 It is a cross-sectional view for explaining a pattern transfer method using a grayscale mask (graytone mask) of the present invention. in addition, figure 2 It is a plan view showing the first embodiment of the defect correction method according to the present invention in the order of steps.

[0063] figure 1 The gray-scale mask 20 of the present invention shown (here not shown the corrected defect area) is for example used in the manufacture of thin film transistors (TFT), color filters or plasma display panels (PDP) of liquid crystal display devices (LCD), etc., in figure 1 On the transfer target body 30 shown, a resist pattern 33 having a film thickness stepwise or continuously different is formed. In addition, in figure 1 In , reference numerals 32A and 32B represent films laminated on the substrate 31 in the transferred body 30 .

[0064]The grayscale mask 20 is specifically configured to have a light shielding portion 21 that blocks exposure li...

no. 2 Embodiment approach 〕

[0093] Figure 4 It is a plan view showing the second embodiment of the defect correction method according to the present invention in order of steps. In the second embodiment, also on the transparent substrate 24, the semi-transmissive film 26 (exposure light transmittance: 50%) containing molybdenum silicide and the light-shielding film 25 mainly composed of chromium are formed on the transparent substrate 24. For patterning, a grayscale mask for TFT substrate production having light shielding portions 21 (light shielding portions 21 a and 21 b ), light transmitting portions 22 , and semitransparent portions 23 was used. However, in the second embodiment, if Figure 4 As shown in a, as an example of a mask pattern, a shape surrounded by two light shielding portions 21 a and 21 b and a light transmitting portion 22 is used for the region of each semi-transparent portion 23 . In addition, the manufacturing method is as described above.

[0094] A method of correcting defect...

no. 3 Embodiment approach 〕

[0104] Figure 5 It is a plan view showing the third embodiment of the defect correction method according to the present invention in order of steps. In the third embodiment, also on the transparent substrate 24, a semi-transmissive film 26 (exposure light transmittance: 50%) containing molybdenum silicide (molibden silicide) and a light-shielding film 25 mainly composed of chromium are formed. By carrying out predetermined patterning, a grayscale mask for TFT substrate production having light-shielding portions 21 (light-shielding portions 21 a and 21 b ), light-transmitting portions 22 , and semi-light-transmitting portions 23 is used. However, in the third embodiment, if Figure 5 As shown in (a), as an example of a mask pattern, the semi-transparent part of each pattern uses a shape surrounded by two light-shielding parts 21a and 21b and a light-transmitting part 22 in the area where the semi-transparent part 23 is used. In addition, the manufacturing method is as mentio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a gray level mask defection correcting method, that is a gray level mask defection correcting method for a semi-translucent section (23) having a shading section (21), a translucent section (22) and reducing translucent amount of exposal light to specified amount. The semi-translucent section (23) formed by semi-translucent film (26), and has a working procedure for determining the defection parts (51), (52) when generating defection in the semi-translucent section (23); a working procedure all semi-translucent film (26) of the semi-translucent section including the defections (51), (52), that is an area surrounded by at least on of the shading section and the translucent section; and a working procedure forming semi-translucent correcting film (27) different from raw material or composition of the semi-translucent film (26) at the semi-translucent film (26) removed area (53).

Description

technical field [0001] The present invention relates to a defect correction method of a gray scale mask used in the production of liquid crystal display (Liquid Crystal Display: hereinafter referred to as LCD), a method of manufacturing a gray scale mask, a gray scale mask and a pattern transfer method, and particularly It relates to a defect correction method of a grayscale mask suitably used in the production of a thin film transistor liquid crystal display device, a method of manufacturing a grayscale mask, a grayscale mask, and a pattern transfer method. Background technique [0002] Currently, in the LCD field, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) compared with CRT (cathode ray tube), due to its advantages of thin, cheap and low power consumption, commercialization is rapid progress. TFT-LCD has: a TFT substrate with a structure in which TFTs are arranged in each pixel arranged in ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/72G03F1/32G03F7/00G03F1/28G03F1/54G03F1/74
CPCG03F1/32G03F1/72
Inventor 佐野道明坂本有司
Owner HOYA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com