Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for on-line fault diagnosis of etching equipment

A technology for etching equipment and fault diagnosis, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as complexity, equipment maintenance sensitivity, and difficulty in application, to achieve sensitive fault monitoring, improve applicability, and avoid complexity. degree of effect

Active Publication Date: 2008-02-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] This method is generally more complicated and requires multivariate statistical analysis knowledge. The establishment of the model needs to be determined according to the results of a large number of experiments, and due to the high sensitivity to process results, the fixed control limit is more sensitive to equipment maintenance. Therefore, in the equipment After maintenance, the model needs to be rebuilt, which is complicated and difficult to apply

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for on-line fault diagnosis of etching equipment
  • Method for on-line fault diagnosis of etching equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] A preferred embodiment of the present invention is, firstly, select a plurality of parameters in the process, and perform mathematical operations on the multiple parameters in the process to obtain new parameters, the amount of change of the new parameters is more obvious than the amount of change of a single parameter ; Then, set the control limit as required, and judge the operating state of the etching equipment according to the new parameter and the control limit; if the new parameter value exceeds the control limit, it is judged that the etching equipment is in a fault state.

[0034] As shown in Figure 2 (a), 2 (b), and 2 (c), select the first parameter and the second parameter, wherein the first parameter decreases with the increase of the number of silicon wafers processed, assuming that this decrease is a fault state, It is necessary to increase its variation, so that the fault state can be detected early and processed to avoid scrapping of silicon wafers. At t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an etching equipment on-line fault diagnosis methods, and it includes the following steps: First, select a number of parameters in the process, and then perform mathematical calculation of those process parameters for new math parameters. It finds that the changes of described new is more significant than that of single parameter; then, set control boundaries according to your need, and judge the state of etching equipment according to the new parameters and control limits. In this process, if the change of the parameters are gradually increased or decreased or mutated within the acceptable scope, some modification should be made to make the changing trend approach the normal level. The control boundary should be set on the both sides of the new parameter's changing trend, so the change of the abnormal data points would be obvious and the more sensitive process monitoring would be obtained.

Description

technical field [0001] The invention relates to a method for fault diagnosis of a technological process, in particular to a method for online fault diagnosis of etching equipment. Background technique [0002] When the semiconductor silicon wafer (wafer) processing technology develops below 90nm, more and more device units are integrated on each silicon wafer, and the cost of each silicon wafer increases accordingly. In order to effectively improve the quality rate and avoid the generation of waste wafers, more and more 300mm silicon wafer processing factories use APC (Advanced Process Control, Advanced Process Control) to detect problems in the silicon wafer processing process in time, and timely correct Silicon wafer processing quality control. An important part of advanced process control is fault diagnosis and classification, that is, in the process of silicon wafer processing, real-time monitoring process data, including hardware information involved in the process, us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/66
Inventor 陈卓李荣甫张善贵
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com