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A Nano-Silicon Oxide Insulator for Vfto Suppression

A nano-silicon oxide, insulator technology, applied in insulators, electrical components, circuits, etc., can solve the problems of surface charge accumulation on insulators and unstable operation of GIS equipment, and achieve the effect of reducing charge accumulation and maintaining reliability.

Active Publication Date: 2019-03-15
YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a nano-silicon oxide insulator for suppressing VFTO, so as to solve the problem of unstable operation of GIS equipment caused by the accumulation of charges on the surface of the insulator under the action of VFTO

Method used

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  • A Nano-Silicon Oxide Insulator for Vfto Suppression
  • A Nano-Silicon Oxide Insulator for Vfto Suppression
  • A Nano-Silicon Oxide Insulator for Vfto Suppression

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Experimental program
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Effect test

Embodiment 1

[0024] figure 1 A schematic structural diagram of a nano-silicon oxide insulator for suppressing VFTO provided by the embodiment of the present application. see figure 1 , the insulator includes: a central insert 1 , an insulating area 2 , a nano-silicon oxide creepage area 3 and a fixing flange 4 . Wherein, the central insert 1 is arranged on the top of a hollow cone, and the cone is divided into two parts, wherein one end close to the central insert 1 is an insulating region 2, and the rest is a nano-silicon oxide creepage region 3, The bottom of the nano-silicon oxide creepage region 3 is connected to the fixing flange 4 . That is to say, the longitudinal section of the insulator is a "V"-shaped structure.

[0025] Optionally, the insulating region 2 provided in the embodiment of the present application is an epoxy resin-based alumina margin region, wherein the addition amount of alumina can be any value between 5% and 10%, for example, 8%. It should be noted that the c...

Embodiment 2

[0033] The various parts of the insulator provided in Example 1 of the present application, including the central insert 1, the insulating area 2, the nano-silicon oxide creepage area 3 and the fixing flange 4, are integrated connection structures, rather than being connected by bolts, screws, etc. of. This embodiment mainly describes the preparation method of the insulator.

[0034] The integrated insulator provided in the embodiment of the present application is prepared by vacuum casting. During the operation of GIS, under the action of VFTO, charges will be introduced on the surface of the insulator. Compared with the bolt connection, the integrated connection structure is beneficial to reduce the resistance of the insulator itself, and facilitate the dissipation of the charges accumulated on the surface of the insulator.

[0035] Specifically, the preparation method of the integrated insulator provided in the embodiment of the present application is as follows:

[0036...

Embodiment 3

[0040] In this embodiment, insulators with nano-silicon oxide additions of 0%, 5% and 10% in the nano-silicon oxide creepage region 3 were respectively used to carry out VFTO wave application experiments to detect the effect of the insulator on the dissipation of surface charges, as follows shown.

[0041] image 3 The VFTO waveform diagram applied at the center insert 1 provided in the embodiment of the present application. Apply the VFTO wave at the central insert 1 of each of the above insulators, and collect the surface potential data from the high-voltage electrode to the fixed flange 4 on the surface of each insulator, and obtain the following: Figure 4 The potential diagram of the high voltage electrode to the fixing flange 4 of the insulator is shown.

[0042] From Figure 4 It can be seen that the surface potential of the insulator with the addition of 0% nano-silicon oxide in the nano-silicon oxide creepage region 3 is the highest, followed by the insulator with th...

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Abstract

The application relates to the technical field of power equipment, in particular to a nano-silicon-oxide insulator for suppressing a VFTO. The insulator comprises a center embedded member, an insulating area, a nano-silicon oxide creepage area and a fixed flange. The center embedded member is arranged at the top of a hollow cone; the insulating area is formed at one end, approaching the center embedded member, of the cone; and the nano-silicon oxide creepage area is formed at the rest part; and the bottom of the nano-silicon oxide creepage area is connected with the fixed flange. A large contact interface is formed between the nano-silicon oxide and the substrate in the creepage area; when an external VFTO is applied to the surface of the insulator, the pull-back frequency of the VFTO is increased by the contact interface, the propagation of the VFTO in a basin type insulator is restricted, and thus normal electric field distribution formed on the surface of the basin type insulator is suppressed. Therefore, when a VFTO wave occurs, charge accumulation on the side wall of the insulator is reduced and reliability of the insulator is kept.

Description

technical field [0001] The present application relates to the technical field of power equipment, in particular to a nano-silicon oxide insulator for suppressing VFTO. Background technique [0002] GIS (Gas Insulated Switchgear, gas-insulated metal-enclosed combined electrical appliances) has many characteristics such as small footprint and space volume, safe and reliable operation, little influence from the natural environment, good breaking performance of circuit breakers, and convenient installation, so it is widely used in In the AC substation. Insulators are very important insulating parts in GIS, which play the roles of fixing, insulating and sealing. [0003] At present, the insulators commonly used in GIS equipment include central inserts, insulating areas and connection seats. When VFTO (Veryfast transient overvoltage, fast transient overvoltage) acts on the surface of the insulator, the insulator cannot dissipate the charge, which causes the insulator to withstan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B17/42
CPCH01B17/42
Inventor 何顺何金良李传扬彭晶马宏明
Owner YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
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