Bismuth-doped phosphosilicate glass and preparation method thereof

A technology of phosphosilicate glass and phosphate glass, applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problems of enhancing luminescence bandwidth, reducing bismuth luminescence performance, difficult to prepare high proportion, etc., and achieving high fluorescence half width effect

Active Publication Date: 2020-01-17
HARBIN ENG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Problems with existing technology: P 2 o 5 As a traditional glass nucleating agent, it is introduced in large quantities through the traditional high-temperature melting method, that is, the mixed batch is melted at high temperature and then quenched and formed at low temperature. For details, see figure 1 , it is easy to cause devitrification of the glass, severely damage the optical properties of the glass, and it is difficult to prepare a high proportion of P 2 o 5 The phosphosilicate glass limits the further enhancement of the luminescence bandwidth, and the introduction of a large amount of alkaline earth or alkali metal will reduce the luminescence performance of bismuth

Method used

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  • Bismuth-doped phosphosilicate glass and preparation method thereof
  • Bismuth-doped phosphosilicate glass and preparation method thereof
  • Bismuth-doped phosphosilicate glass and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Example 1: 50 (65SiO 2 -9Al 2 o 3 -25CaO-1Bi 2 o 3 )-50(82P 2 o 5 -17Al 2 o 3 -1Bi 2 o 3 )

[0030] Preparation method: According to the above molar ratio, weigh 16g and 34g of silicate and phosphate matrix glass raw materials respectively, totaling 50g, of which P 2 o 5 The ratio is 41mol.%, put into a ball mill and stir for 1 hour, then put into two crucibles, and preheat in a furnace at 600°C for 60min. Transfer the preheated raw materials to a furnace at 1600°C, and cover the crucible containing the phosphate glass raw materials. Melt for 120 minutes, then pour the silicate glass stock solution into the phosphate stock solution in the furnace, or pour the phosphate stock solution into the silicate glass stock solution, stir for 10 seconds, and pour it on a copper plate preheated at 500°C. Pressed into thin slices of 3mm thickness. Put it into a furnace at 500°C for annealing for 180 minutes, and cool down to room temperature with the furnace cooling. ...

example 2

[0031] Example 2: 40 (65SiO 2 -10Al 2 o 3 -25CaO-1Bi 2 o 3 )-60(82P 2 o 5 -18Al 2 o 3 -1Bi 2 o 3 )

[0032] Preparation method: According to the above molar ratio, weigh 12g and 38g of silicate and phosphate matrix glass raw materials respectively, totaling 50g, of which P 2 o 5The proportion is 49.2 mol.%. Bismuth-doped phosphosilicate glass is prepared by the same method as in Example 1 to obtain the final product. Carry out performance test to the sample, among them, image 3 The second from the left is the actual picture of the prepared glass; Figure 4 is the fluorescence spectrum of the sample excited by a near-infrared semiconductor laser, and its fluorescence half maximum width is 255nm.

example 3

[0033] Example 3: 30 (65SiO 2 -10Al 2 o 3 -25CaO-1Bi 2 o 3 )-70(82P 2 o 5 -18Al 2 o 3 -1Bi 2 o 3 )

[0034] Preparation method: According to the above molar ratio, weigh 8g and 42g of silicate and phosphate matrix glass raw materials respectively, totaling 50g, of which P 2 o 5 The ratio is 57.4 mol.%. Bismuth-doped phosphosilicate glass is prepared by the same method as in Example 1 to obtain the final product. Carry out performance test to the sample, among them, image 3 The third from the left is the actual picture of the prepared glass; Figure 4 is the fluorescence spectrum of the sample excited by a near-infrared semiconductor laser, and its fluorescence half-maximum width is 265nm.

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Abstract

The invention provides a bismuth-doped phosphorosilicate glass and a preparation method thereof. The bismuth-doped phosphorosilicate glass is characterized by comprising 40 mol% to 70 mol% of P2O5. Under the pumping of a near-infrared semiconductor laser, ultra-wideband near-infrared light with a full width at half maximum of greater than 250 nm is observed. The bismuth-doped phosphorosilicate glass is prepared by the following steps: firstly, weighing bismuth-doped silicate and phosphate glass raw materials, respectively; melting to prepare two kinds of glass, respectively; then, mixing and stirring the two kinds of molten glass in a molten state; finally, cooling and molding the mixed molten glass. The method can be adopted to prepare bismuth-doped phosphorosilicate glass with high P2O5 ratio and high transmittance; the glass has relatively high fluorescence full width at half maximum; the bismuth-doped phosphorosilicate glass prepared by a novel method is expected to be applied to fields of ultra-wideband near-infrared light fiber lasers, tunable near-infrared fiber lasers and the like.

Description

technical field [0001] The present invention relates to a kind of optical glass, especially a kind of high P 2 o 5 Proportional bismuth-doped phosphosilicate glass and a preparation method thereof, the glass has a wide half-width of fluorescence, and is suitable for use as a gain medium in optical amplifiers and / or lasers. Background technique [0002] Bismuth ion-doped oxide glass has near-infrared luminescent properties, stable physical and chemical properties, good mechanical strength and hardness, and is easy to weld with existing commercial communication silica optical fibers, making it an ideal matrix material for optical fiber amplifiers. In 2001, Fujimoto and Nakatsuka reported in Jpn.J.App.Phys., 40, (2001) L279 the first preparation of bismuth-doped silicate glass with ultra-broadband near-infrared luminescence characteristics, the composition is 95SiO 2 -2Al 2 o 3 -3Bi 2 o 3 , its luminescence peak is located at 1250nm, and its full width at half maximum is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C4/12C03C3/062C03B19/02
CPCC03B19/02C03C3/062C03C4/12
Inventor 任晶楚玉石张建中
Owner HARBIN ENG UNIV
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