Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional memory and formation method for channel hole structure of three-dimensional memory

A channel structure and memory technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as high cost, increased etching time, and low process efficiency

Active Publication Date: 2017-07-04
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 42 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, when the number of stacked layers in the three-dimensional memory reaches 120 or more, and then a single etching method is used to form channel holes penetrating through each stacked layer, there is a phenomenon that the etching time increases exponentially, the process efficiency is low, and the cost higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and formation method for channel hole structure of three-dimensional memory
  • Three-dimensional memory and formation method for channel hole structure of three-dimensional memory
  • Three-dimensional memory and formation method for channel hole structure of three-dimensional memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0106] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0107] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0108] An embodiment of the pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the invention disclose a three-dimensional memory and a formation method for a channel hole structure of the three-dimensional memory. By implementing two times of a through hole formation process of a first through hole and a second through hole, the channel hole structure in the three-dimensional memory is formed, so that the process difficulty and cost of the channel hole structure can be greatly lowered; the problem of high process difficulty and high cost caused by overhigh depth-to-width ratio of the through holes under the same caliber are solved; and meanwhile, the manufacturing process difficulty and cost of the three-dimensional memory are lowered.

Description

technical field [0001] The invention relates to the technical field of three-dimensional memory, in particular to a three-dimensional memory and a method for forming a channel hole structure thereof. Background technique [0002] As the number of layers of ON (Oxide / Nitride) in three-dimensional memory (such as 3D NAND) increases, the depth of the channel hole formed in the three-dimensional memory becomes larger and larger, and the channel hole is formed by a single etching process. When , in the case of the same pore diameter, the greater the depth of the channel hole, the more difficult it is to etch. In particular, when the number of stacked layers in the three-dimensional memory reaches 120 or more, and then a single etching method is used to form channel holes penetrating through each stacked layer, there is a phenomenon that the etching time increases exponentially, the process efficiency is low, and the cost higher. Contents of the invention [0003] In order to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768H01L27/11551H01L27/11578
CPCH01L21/768H10B41/20H10B43/20
Inventor 吕震宇施文广吴关平潘锋万先进陈保友
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com