Three-dimensional memory and formation method of channel pore structure thereof
A channel structure and memory technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increased etching time, high cost, and low process efficiency
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[0105] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0106] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0107] An embodiment of the pre...
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