Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic compound containing dimethylanthracene and application thereof in OLED

A technology of organic compounds, dimethyl anthracene, applied in the field of organic optoelectronic materials, which can solve problems such as disparity

Active Publication Date: 2017-03-01
JIANGSU SUNERA TECH CO LTD
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, for the collocation of OLED devices with different structures, the photoelectric functional materials used have strong selectivity, and the performance of the same material in devices with different structures may be completely different.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic compound containing dimethylanthracene and application thereof in OLED
  • Organic compound containing dimethylanthracene and application thereof in OLED
  • Organic compound containing dimethylanthracene and application thereof in OLED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] Embodiment 1: the synthesis of compound 2:

[0072] synthetic route:

[0073]

[0074] In a 250ml three-neck flask, under the protection of nitrogen, add 0.01mol raw material A1, 0.012mol raw material B1, 0.03mol sodium tert-butoxide, 5×10 -5 molpd 2 (dba) 3 , 5×10 -5 mol of tri-tert-butylphosphine, 150ml of toluene, heated to reflux for 24 hours, sampled on a plate, and the reaction was complete; natural cooling, filtration, rotary evaporation of the filtrate, column chromatography to obtain the target product, HPLC purity 99.1%, yield 67.3%;

[0075] Elemental analysis structure (molecular formula C 67 h 55 N 3 ): theoretical value C, 89.20; H, 6.14; N, 4.66; test value: C, 89.20; H, 6.15; N, 4.65.

[0076] HPLC-MS: The molecular weight of the material is 902.17, and the measured molecular weight is 902.57.

Embodiment 2

[0077] Embodiment 2: the synthesis of compound 3:

[0078] synthetic route:

[0079]

[0080] In a 250ml three-neck flask, under the protection of nitrogen, add 0.01mol raw material A1, 0.012mol raw material B2, 0.03mol sodium tert-butoxide, 5×10 -5 mol pd 2 (dba) 3 , 5×10 -5 mol of tri-tert-butylphosphine, 150ml of toluene, heated to reflux for 24 hours, sampled on a plate, and the reaction was complete; natural cooling, filtration, rotary evaporation of the filtrate, column chromatography to obtain the target product, HPLC purity 99.3%, yield 62.7%;

[0081] Elemental analysis structure (molecular formula C 64 h 49 N 3 O): theoretical value C, 87.74; H, 5.64; N, 4.80; O, 1.83; tested value: C, 87.74; H, 5.62; N, 4.82;

[0082] HPLC-MS: The molecular weight of the material is 876.09, and the measured molecular weight is 876.51.

Embodiment 3

[0083] Embodiment 3: the synthesis of compound 9:

[0084] synthetic route:

[0085]

[0086] In a 250ml three-neck flask, under the protection of nitrogen, add 0.01mol raw material A1, 0.012mol raw material B3, 0.03mol sodium tert-butoxide, 5×10 -5 mol pd 2 (dba) 3 , 5×10 -5 mol of tri-tert-butylphosphine, 150ml of toluene, heated to reflux for 24 hours, sampling point plate, the reaction was complete; natural cooling, filtration, filtrate rotary evaporation, column chromatography to obtain the target product, HPLC purity 99.4%, yield 71.2%;

[0087] Elemental analysis structure (molecular formula C 64 h 45 N 3 O): theoretical value C, 88.15; H, 5.20; N, 4.82; O, 1.83; tested value: C, 88.14; H, 5.21; N, 4.83;

[0088] HPLC-MS: The molecular weight of the material is 872.06, and the measured molecular weight is 872.48.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic compound containing dimethylanthracene and application thereof in an organic light-emitting device (OLED). A structure general formula of the organic compound is represented as the formula (I). The compound has high glass transition temperature and molecular thermostability, appropriate HOMO and LUMO energy level and high Eg. Through structural optimization of the device, photoelectric performance and service life of the OLED can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of organic photoelectric materials, in particular to a compound material containing a dimethyl anthracene structure as a central skeleton and its application in the field of OLEDs. Background technique [0002] Organic electroluminescent (OLED: Organic Light Emission Diodes) device technology can be used to manufacture new display products and also can be used to make new lighting products, which is expected to replace the existing liquid crystal display and fluorescent lighting, and has a wide application prospect. [0003] The OLED light-emitting device is like a sandwich structure, including electrode material film layers, and organic functional materials sandwiched between different electrode film layers. Various functional materials are superimposed on each other according to the application to form an OLED light-emitting device. As a current device, when a voltage is applied to the electrodes at both e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C07D405/14C07D265/38C07D219/08C07D413/04C07D413/14C07D401/04C07D401/14C07D403/04C07D417/14C07D417/04C07D265/34C07D279/18C07D221/18C07D241/46C07D491/048C07D471/04C07D513/04C07D471/06C07D498/06C07D487/06C07D498/04C07D491/052C07D491/056C09K11/06H01L51/54H01L51/50
CPCC09K11/06C07D219/08C07D221/18C07D241/46C07D265/34C07D265/38C07D279/18C07D401/04C07D401/14C07D403/04C07D405/14C07D413/04C07D413/14C07D417/04C07D417/14C07D471/04C07D471/06C07D487/06C07D491/048C07D491/052C07D491/056C07D498/04C07D498/06C07D513/04C09K2211/1044C09K2211/1033C09K2211/1037C09K2211/1029C09K2211/1007C09K2211/1011H10K85/6576H10K85/6574H10K85/657H10K85/6572H10K50/11
Inventor 张兆超李崇叶中华张小庆王立春
Owner JIANGSU SUNERA TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com