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Plasma generating device and semiconductor device having same

A plasma and generating device technology, which is applied in the fields of plasma, semiconductor/solid-state device manufacturing, discharge tube, etc., can solve problems such as failure, exceeding the operating temperature of the sealing ring, etc., and achieve the effects of simple structure, uniform velocity field, and uniform flow rate

Active Publication Date: 2019-04-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the high temperature generated under high power density is likely to exceed the service temperature of the sealing ring (O-ring), making it invalid

Method used

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  • Plasma generating device and semiconductor device having same
  • Plasma generating device and semiconductor device having same
  • Plasma generating device and semiconductor device having same

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Embodiment Construction

[0040] In the following description, a large number of details are provided to enable a thorough understanding of the present invention. However, those skilled in the art can understand that the following description only relates to the preferred embodiments of the present invention, and the present invention may be implemented without one or more such details. In addition, in order to avoid confusion with the present invention, some technical features known in the art are not described.

[0041] According to one aspect of the present invention, a plasma generating device is provided. The plasma generating apparatus can be used in semiconductor equipment such as dry etching equipment. In order to easily understand the plasma generation device provided by the present invention, the overall structure of the semiconductor device with the plasma generation device will now be briefly introduced. figure 1 with 2 A semiconductor device according to an embodiment of the present inventio...

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Abstract

The present invention provides a plasma generation device and a semiconductor device having the same. The plasma generation device comprises: a plasma generation chamber; a sleeve which encircles the plasma generation chamber around the plasma generation chamber; an air-flow channel formed between the outer wall of the plasma generation chamber and the sleeve; a cover plate configured to cover the top of the air flow channel; an air nozzle arranged on the cover plate and configured to jet cooling gas from the top of the air flow channel to the air flow channel; and an air outlet arranged at the lower portion of the air flow channel. A vertical flow cooling air flow path is arranged to improve the heat exchange efficiency, ensure the uniform speed field of the area of the outer wall of the plasma generation chamber and cause the uniform heat convection. Because an air nozzle configured to supply air through pressure is employed, adding extra electric appliance elements in a radio frequency area is avoided, and therefore the plasma generation chamber has a relative simple structure.

Description

Technical field [0001] The present invention relates to the field of semiconductor equipment, and in particular to a plasma generation device and a semiconductor device having the plasma generation device. Background technique [0002] Plasma generators are widely used in the manufacturing processes of integrated circuits (IC), power devices, MEMS (Micro Electromechanical System) devices, etc. One of the notable applications is inductively coupled plasma (ICP) devices. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles interact with the semiconductor substrate to cause various physical and chemical reactions on the surface of the material on the semiconductor substrate. Make the surface properties of the material change. In the semiconductor device manufacturing process, multiple layers of materials can be alternately deposited on the surface of the semiconductor substrate and etched to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/26H01J37/32H01L21/67
Inventor 赵隆超
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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