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A resonant infrared detector structure and manufacturing method capable of isolating packaging stress

An infrared detector and packaging stress technology, applied in the direction of microstructure devices composed of deformable elements, microstructure technology, microstructure devices, etc., can solve the problems of increasing response time and so on

Inactive Publication Date: 2019-04-16
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conversely, if the thermal expansion coefficient of the packaging material is smaller than that of the chip on which the microbridge resonator is made, the responsivity of the resonator to detect infrared radiation will be improved, but the response time will be increased

Method used

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  • A resonant infrared detector structure and manufacturing method capable of isolating packaging stress
  • A resonant infrared detector structure and manufacturing method capable of isolating packaging stress
  • A resonant infrared detector structure and manufacturing method capable of isolating packaging stress

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Embodiment 1

[0026] A resonant infrared detector capable of isolating packaging stress is manufactured by utilizing the technical scheme of the invention. Its micro-bridge resonator adopts polysilicon resistance electrothermal excitation and piezoresistive detection. Its production process is as follows:

[0027] (1) The original material is a double-sided polished silicon wafer of N-type, (100) plane, and resistivity 1-10Ω.cm. (see attached figure 2 (a))

[0028] (2) Thermally oxidize and grow a silicon dioxide film 7 with a thickness of 1 micron. (see attached figure 2 (b))

[0029] (3) A silicon nitride film 8 is deposited by a low-pressure chemical vapor deposition process (LPCVD), with a thickness of 0.3 microns. (see attached figure 2 (c))

[0030](4) Deposit a polysilicon film 9 with a thickness of 0.8 microns by a low-pressure chemical vapor deposition process (LPCVD). (see attached figure 2 (d))

[0031] (5) Ion implantation process Boron atoms are doped into the po...

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Abstract

The invention discloses a resonant type infrared detector structure capable of isolating packaging stress and a manufacturing method thereof, and belongs to the field of micro-electronic mechanical systems. The resonant type infrared detector structure is characterized by being composed of a micro-bridge resonator chip and a lower bottom plate. The micro-bridge resonator chip is composed of a micro-bridge resonator (1), a rectangular framework (2), two supporting beams (3) and a substrate (4). One end of each supporting beam (3) is fixedly supported by the substrate (4), and the other ends of the supporting beams (3) are connected with a pair of opposite sides of the rectangular framework (2). The two ends of the micro-bridge resonator (1) are fixedly supported between the other pair of opposite sides of the rectangular framework (2). The micro-bridge resonator (1), the rectangular framework (2) and the supporting beams (3) are suspended above a lower bottom plate (5). The thermal expansion of the lower bottom plate (5) cannot change the distance between one pair of opposite sides, supporting the micro-bridge resonator (1), of the rectangular framework (2), and the length, the axial strain and the resonant frequency of the micro-bridge resonator (1) cannot be changed.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of an infrared detector, in particular to a structure and a manufacturing method of a resonant infrared detector capable of isolating packaging stress, and belongs to the field of micro-electromechanical systems (MEMS). Background technique [0002] According to the working principle, infrared detectors can be divided into two categories: cooled photon detectors and uncooled thermal detectors. The photon detector based on the photoelectric effect (photovoltaic effect, photoconductive effect, photoelectromagnetic effect and light emission effect) generated by the interaction between the incident photon flow and the detection material has good wavelength selectivity, short response time, and low noise equivalent temperature difference. It has a high detection rate and has been widely used in military fields such as aerospace, missile guidance, and infrared night vision. But photon detectors...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B81B7/00B81C1/00B81C3/00G01J5/10
Inventor 韩建强李森林李琰李青
Owner CHINA JILIANG UNIV
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