Liquid processing apparatus for substrate and liquid processing method

A liquid treatment and liquid treatment technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the temperature of the wafer is difficult to rise, and achieve the effect of inhibiting the adhesion of particles

Active Publication Date: 2014-01-01
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when a wafer is subjected to high-temperature processing, even if a high-temperature processing liquid is supplied to the peripheral portion of the wafer, the vicinity of the central portion of the wafer is not heated by the processing liquid, so that the temperature of the entire wafer is difficult to rise. question

Method used

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  • Liquid processing apparatus for substrate and liquid processing method
  • Liquid processing apparatus for substrate and liquid processing method
  • Liquid processing apparatus for substrate and liquid processing method

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Embodiment Construction

[0035] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, use Figure 7 A liquid processing system including the liquid processing device of the substrate according to the embodiment of the present invention will be described.

[0036] Such as Figure 7As shown, the liquid processing system includes: a mounting table 101, which is used to mount a carrier (carrier) that accommodates a substrate W (hereinafter also referred to as a wafer W) such as a semiconductor wafer as a substrate to be processed from the outside; 102, which is used to take out the wafer W contained in the bracket; the rack unit 103, which is used to load the wafer W taken out by the transport arm 102; the transport arm 104, which is used to receive the wafer W placed on the rack unit 103 The wafer W is transported into the liquid processing apparatus 1 . Such as Figure 7 As shown, multiple ( Figure 7 12 in the state shown) The liquid treatment a...

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Abstract

Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.

Description

technical field [0001] The present invention relates to a substrate liquid processing apparatus and a liquid processing method for processing a substrate by supplying a processing liquid to a peripheral portion of a substrate such as a semiconductor wafer. Background technique [0002] Conventionally, there is known a liquid processing apparatus for processing a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) by supplying a processing liquid to the substrate. This substrate liquid processing apparatus includes a holding unit for holding one wafer in a substantially horizontal state, and a rotation driving unit that rotates the holding unit about an axis extending in a vertical direction, and the holding unit is rotated by the rotation driving unit, The wafer held in a substantially horizontal state by the holding portion is rotated around an axis extending in the vertical direction. In addition, the above-mentioned liquid processing apparat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/00
CPCH01L21/67109H01L21/67051H01L21/6708
Inventor 天野嘉文水野刚资
Owner TOKYO ELECTRON LTD
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