Semiconductor device
A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increased loss and increased on-resistance, and achieve the effect of preventing the reduction of withstand voltage
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Embodiment 2
[0076] Figure 4 With figure 1 (a) A plan view of the main part of the semiconductor device corresponding to the second embodiment of the present invention. The difference from Embodiment 1 is that the planar shape of the p isolation region 4e and the n drift region 3a of the active region 21 is stripe. As in Example 1, when the impurity dose of the p isolation region 4e is four times the impurity dose of the n drift region 3a, the area of the p isolation region 4e in the D part of the active region 21 is the area of the D part. 1 / 4 of that, thus, charge balance can be achieved, and a decrease in withstand voltage can be prevented.
[0077] The shape and size of the p-isolation region of the termination region 23 are the same as those of the p-isolation region of Embodiment 1.
[0078] in addition, Figure 4 The p isolation regions 4f, 4g of the transition region 22 on the side of the active region 21 and the image 3 (b), image 3 Parts 4f and 4g of the p isolation ...
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