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Mass analyzing magnet for broadband ion beam and implanter system

A mass analysis, ion beam technology, applied in the direction of magnets, magnetic objects, discharge tubes, etc., can solve the problems of small system aberration, can not provide mass resolution, etc., achieve zero system aberration, superior control ability, reduce angle discrete effects

Inactive Publication Date: 2010-04-07
胡新平 +2
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems in the prior art, the present invention provides a mass analysis magnet and injector system for broadband ion beams, which solves the problem that a magnet with suitable mass resolution and system aberration cannot be provided in the current magnet design. Problems with small and broadband ion beams delivering large beam currents

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  • Mass analyzing magnet for broadband ion beam and implanter system
  • Mass analyzing magnet for broadband ion beam and implanter system
  • Mass analyzing magnet for broadband ion beam and implanter system

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Embodiment Construction

[0050] The present invention will be further described below in conjunction with accompanying drawing.

[0051] Some descriptions of the prior art are as follows:

[0052] Such as figure 1 Among them, reproduced from U.S. Patent No. 5834786, a broadband beam ion beam implanter system for flat panel displays produced by Mitsui Shipbuilding Corporation of Japan, the system includes a magnetic field mass analyzer, although it has only a weak mass resolution capability (mass resolution is 2), but for flat panel displays this is more than enough to eliminate some of the harsh contaminant ions.

[0053] Different from the above, the broadband beam ion implanter system produced by Varian Semiconductor Corporation of the United States is used for semiconductor silicon wafer implantation. The system utilizes two different magnets to generate a suitable broadband ion beam. The first magnet performs mass analysis of the ion beam and the second magnet parallelizes the ion beam. The ma...

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Abstract

The invention relates to the implantation field of broadband ion beams, and discloses a mass analyzing magnet for broadband ion beams. The mass analyzing magnet comprises a magnet and a coil connected with a power supply. The magnet comprises magnetic poles, a magnet yoke and magnetic shielding plates, the magnetic poles comprise an upper magnetic pole and a lower magnetic pole, the magnetic shielding plates comprise an upper magnetic shielding plate and a lower magnetic shielding plate, and a magnetic field space for the broadband ion beams to pass in a certain route is arranged between the upper magnetic pole and the lower magnetic pole. The invention further discloses an implanter system, which comprises an ion source, an extraction electrode unit, a deflection speed-reducing unit, a mass analyzing magnet, a target workpiece and workpiece transmitting unit, a beam flux measuring and diagnosing unit and a control unit. The invention has the beneficial effect of high quality resolution and nearly zero system aberration, and can generate pure broadband ion beams of 300mm, 450mm and even 1000mm, thereby improving the quality of ultra-low energy ion beams generated by a speed reducer and decreasing the angular dispersion of the ultra-low energy ion beams.

Description

technical field [0001] The invention relates to the field of implantation of broadband ion beams, in particular to a mass analysis magnet and implanter system for broadband ion beams. Background technique [0002] In the prior art, ion beams produced from ion sources typically contain one or more unwanted ions derived from ion chamber materials of the ion source and working gas molecules or solid molecules provided to produce the desired ions. Therefore, it has been standard practice for many years to use a magnetic field mass analyzer to separate these unwanted ions from the ion beam. However, this type of magnetic field mass analyzer has become increasingly difficult and expensive for broadband ion beams, especially those with large aspect ratios and large beam currents. Researchers have developed different ion implantation systems to generate broadband ion beams. However, due to the unsatisfactory performance of the analytical magnets, these types of ion implantation sy...

Claims

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Application Information

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IPC IPC(8): H01F7/00H01J37/317
Inventor 胡新平胡爱平黄永章
Owner 胡新平
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