Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace

Abstract

The invention relates to production control of a polycrystalline silicon ingot casting furnace and aims at providing a heating control system and a method based on a top separated control polycrystalline silicon ingot casting furnace. A side heater in the system is connected with a side power supply, a top heater is connected with a top power supply, the side power supply and the top power supplyare connected to a power distribution control module through conducting wires, in addition, the heat control system is provided with a central control module, a heating control module, a crystal growing height calculation module, a temperature control sensor, a lower water temperature flow rate sensor, a side water temperature flow rate sensor, a side heater temperature sensor and a top heater temperature sensor, and the temperature control sensor, the lower water temperature flow rate sensor, the side water temperature flow rate sensor, the side heater temperature sensor and the top heater temperature sensor are arranged on the top of a furnace chamber. Compared with the prior art, the system and the method have the advantages that the crystal growing speed is accelerated, the crystal growing time is shortened, the crystal growing speed and the crystal growing height can be precisely calculated, the crystal growing process is precisely controlled, the total power of the heater power is reduced, in addition, the energy consumption is obviously reduced because the crystal growing time is shortened, the crystal growing interface is more smooth, the crystal grain verticality is better, in addition, the crystal favorably grows, and the crystal quality is improved.

Description

technical field [0001] The invention relates to the production control of a polysilicon ingot furnace, in particular to a heating control system and method based on separate control of the top and side of the polysilicon ingot furnace, which is suitable for manufacturing large-sized and high-quality polysilicon ingots. Background technique [0002] Solar energy is an inexhaustible renewable clean energy for human beings. In the effective use of solar energy, solar photovoltaic is undoubtedly the most important and most dynamic research field in recent years, and solar cells have been developed and developed accordingly. Solar cells are mainly made of silicon. Silicon is a common chemical element in nature. The melting point of pure silicon is 1414°C. The purity of solar-grade polysilicon is generally above 99.99%. Polysilicon ingot furnace is a professional silicon remelting equipment for industrial production of qualified solar grade polysilicon ingots. The core environmen...

AI Technical Summary

Problems solved by technology

[0004] Traditional polysilicon ingot furnaces generally realize production through a single heating control method, that is, the heating power adjustment is realized by a single control system during the production process, and the heating effect changes in a single way.

The defect caused by such a technical solution is: while the traditional single-power polysilicon ingot furnace grows in the middle and late stages, due to the increase of crystals and the decrease of liquid, the effect of heat loss is weakened, and at the same time, the height of crystal growth is getting closer and closer to the heater, especially the crucible four. The side heater near the wall has a higher temperature than the center of the crucible, and the crystallization speed is slower, so the crystal growth interface is "convex"

In the end, the crystal growth in the center is completed first, and it must be followed by several hours of corner crystal growth process to make the surface of the entire silicon ingot smooth, resulting in prolonged production time and a significant increase in energy consumption

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