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Semiconductor device and method of fabricating semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, which can solve problems such as residues, scratches, and increased stress

Inactive Publication Date: 2007-03-21
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the CMP process causes scratches, residues, etc. on the top surface of the gate
Also, during polishing, the stress between the polysilicon layer and the gate oxide layer increases, thereby degrading the characteristics of the semiconductor device, such as interface characteristics

Method used

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  • Semiconductor device and method of fabricating semiconductor device
  • Semiconductor device and method of fabricating semiconductor device
  • Semiconductor device and method of fabricating semiconductor device

Examples

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Embodiment Construction

[0015] Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0016] In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. The same reference numerals refer to the same elements throughout. It will also be understood that when an element such as a layer, film, region, panel, etc. is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. On the other hand, it will be understood that when an element is referred to as being directly on another element, there are no intervening elements present.

[0017] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0018] FIG. 1 is a cross-sectional ...

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PUM

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Abstract

A semiconductor device is provided. A semiconductor device includes a substrate, a gate, spacers, and sources and drains. The gate is formed from silicide on the substrate. Spacers are formed on the gate sidewalls. Sources and drains are formed on the substrate. The gate protrudes more than the spacers.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] The performance of transistors constituting semiconductor devices is closely related to the speed, drive current, and leakage current of the transistors. For higher speed and lower leakage current, the resistance of transistor source and drain, transistor gate resistance and contact part resistance should be reduced. [0003] In order to reduce the resistance of these regions, a silicide layer is formed on the interface of the drain and source and on the interface of the gate. The silicide layer is usually formed of metal and silicon compounds, such as titanium silicide (TiSi 2 ), lead silicide (PbSi 2 ), cobalt silicide (CoSi 2 ) and nickel silicide (NiSi 2 ). [0004] In a semiconductor device including such a silicide layer, a gate is formed on a substrate, and a sacrificial layer is formed to cover the gate. Next, the sacrificial...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L21/28
CPCH01L29/66545H01L29/6656H01L21/28097H01L29/7834H01L29/66628H01L21/18
Inventor 李周炫
Owner DONGBU ELECTRONICS CO LTD
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