High-frequency equivalent circuit, and modeling method and modeling device for high-frequency equivalent circuit

Abstract

The embodiment of the invention discloses a high-frequency equivalent circuit and a modeling method and device of the high-frequency equivalent circuit. The circuit is characterized in that an equivalent resistor, an equivalent capacitor and a drain parasitic inductor are connected in series and are connected in parallel with an absorption circuit formed by connecting a parasitic inductor, an absorption resistor and an absorption capacitor in series, and then an upper tube is connected in series to conduct the equivalent resistor, a power loop parasitic inductor, a direct-current link equivalent series resistor, a power supply, a power loop resistor and a shunt resistor. According to the invention, the problems of serious voltage overshoot, extra power loss, electromagnetic interference noise, even device breakdown and system reliability reduction caused by large oscillation of a Cascode type GaN device under high switching frequency in the prior art are solved; the technical effects of quantitatively suppressing switching oscillation and matching oscillation suppression parameters, ensuring safe and reliable operation of the GaN device and fully exerting the high-frequency switching characteristic of the GaN power device are achieved.

Description

technical field [0001] The invention relates to the technical field of device power conversion, in particular to a high-frequency equivalent circuit, a modeling method and a modeling device for a high-frequency equivalent circuit. Background technique [0002] In recent years, power devices made of gallium nitride (GaN), a third-generation wide-bandgap semiconductor material, have gradually emerged in high-speed and high-power-density power electronic applications. Compared with Si and SiC, GaN power devices have higher switching frequency, smaller on-resistance and smaller gate charge, which means that GaN devices have obvious advantages in high power density and high efficiency converters. The advantages. [0003] Since the depletion-mode GaN device is a normally-on device, the drive and fault protection are not easy to do, and it is not suitable for bridge converter applications. In order to solve this problem, cascading gallium nitride (Cascode-type GaN for short) and ...

AI Technical Summary

Problems solved by technology

[0006] Embodiments of the present invention provide a high-frequency equivalent circuit, a modeling method and a modeling device for a high-frequency equivalent circuit, to at least solve the problem of large oscillations caused by Cascode-type GaN devices in the related art at high switching frequencies, thereby Technical problems that lead to severe voltage overshoot, additional power loss, electromagnetic interference noise, and even device breakdown, reducing system reliability

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