Ultraviolet light-emitting diode epitaxial structure, ultraviolet light-emitting diode and electronic equipment

Abstract

The embodiment of the invention provides an ultraviolet light-emitting diode epitaxial structure, an ultraviolet light-emitting diode and electronic equipment. The epitaxial structure comprises a substrate, a first AlN layer, a multi-cycle composite regulation and control layer, an n-type Al < x > Ga < 1-x > N contact layer, a multi-quantum well light-emitting layer, a p-type Al < y > Ga < 1-y > N barrier layer and a p-type GaN layer which are sequentially grown from bottom to top, and the multi-cycle composite regulation and control layer comprises a plurality of cycle structures which are sequentially grown from bottom to top, each periodic structure comprises a second AlN layer, an Al < m > Ga < 1-m > N layer, an Al < n > Ga < 1-n > N layer and an Al < k > Ga < 1-k > N layer which are sequentially grown from bottom to top, and Al components in the n-type Al < x > Ga < 1-x > N contact layer, the Al < m > Ga < 1-m > N layer, the Al < n > Ga < 1-n > N layer and the Al < k > Ga < 1-k > N layer are different. According to the ultraviolet light-emitting diode epitaxial wafer, the multi-cycle composite regulation and control layer is grown between the first AlN layer and the n-type AlxGa1-xN contact layer, so that lattice mismatch between the first AlN layer and the n-type AlxGa1-xN contact layer is reduced, warping of the ultraviolet light-emitting diode epitaxial wafer is regulated and controlled, dislocation of upward extension of the first AlN layer is filtered, pressure stress of the n-type AlxGa1-xN contact layer is reduced, crystal quality is improved, and light-emitting efficiency of a device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of an ultraviolet light emitting diode, an ultraviolet light emitting diode and electronic equipment. Background technique [0002] Compared with the traditional ultraviolet light source mercury lamp, the ultraviolet light-emitting diode of nitride material has the advantages of low voltage, adjustable wavelength, and environmental protection. It mainly has broad application prospects in the fields of sterilization and disinfection, medical treatment, and biochemical detection. [0003] At present, the epitaxial growth technology of ultraviolet LED is not mature enough, and there are still key scientific problems such as large mismatch, low quantum efficiency, low doping activation efficiency and polarization control in the growth of epitaxial structures. In the epitaxial structure of the UV LED, due to the lattice mismatch between the AlN layer and...

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Problems solved by technology

[0003] At present, the epitaxial growth technology of ultraviolet LED is not mature enough, and there are still key scientific problems such as large mismatch, low quantum efficiency, low doping activation efficiency and polarization control in the growth of epitaxial structures.

In the epitaxial structure of the UV LED, due to the lattice mismatch between the AlN layer and the n-type AlGaN contact layer, new dislocations will be generated at the interface between the AlN layer and the n-type AlGaN layer, and at the same time, a large dislocation will be generated in the n-type AlGaN layer. Compressive stress leads to large warpage of the epitaxial wafer, which in turn affects the luminous efficiency, wavelength uniformity and photoelectric characteristic uniformity of the device

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