A method for preparing sub-10 nanometer-scale biomimetic structure molybdenum disulfide-carbon multilayer film

A technology of molybdenum disulfide and multi-layer film, which is applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problem of low friction coefficient and wear resistance, poor bearing capacity and high wear rate of molybdenum disulfide film and other problems, to achieve the effect of improving uniformity and consistency, improving film/substrate binding force, and increasing plasma density

Active Publication Date: 2022-02-22
LANZHOU UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Molybdenum disulfide film has a low friction coefficient, high compressive strength and oxidation resistance, and is suitable for space moving parts, but the molybdenum disulfide film has poor bearing capacity, low hardness, and is easy to wear, and wears out under high speed and high load High rate, short life, unable to meet the requirements of space moving parts
The carbon film exhibits low friction coefficient and wear resistance in the atmosphere and vacuum, but it is easy to gasify and fail under the irradiation conditions such as vacuum atomic oxygen.

Method used

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  • A method for preparing sub-10 nanometer-scale biomimetic structure molybdenum disulfide-carbon multilayer film
  • A method for preparing sub-10 nanometer-scale biomimetic structure molybdenum disulfide-carbon multilayer film
  • A method for preparing sub-10 nanometer-scale biomimetic structure molybdenum disulfide-carbon multilayer film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1 The single crystal silicon wafer was ultrasonically cleaned with acetone for 10 minutes in a cleaning device. 2 Dry, and then put it into the vacuum chamber; first use the mechanical pump to pump the vacuum chamber to 800Pa, then turn on the Roots pump to pump the vacuum chamber to 10Pa, and then turn on the molecular pump and the low-temperature water vapor pump to pump the vacuum degree of the vacuum chamber to 1.0× 10 -3 Pa; pass 100sccm of Ar gas with a purity greater than 99.99%, and the air pressure is 0.60Pa; turn on the high-voltage ion source power supply, and adjust the high-voltage ion source current to 4A; the high-voltage ion source voltage is 5000V, and the bombardment time is 15min; remove the parts to be plated Oxidation (passivation) layer, dirt and burrs on the surface, that is, the processed base part.

[0022] The Ar gas with a purity greater than 99.99% of 80sccm was introduced, and the treated base member was bombarded with high-energy m...

Embodiment 2

[0029] Example 2 The single crystal silicon wafer was ultrasonically cleaned with acetone in a cleaning device for 10 minutes. 2 Dry, and then put it into the vacuum chamber; first use the mechanical pump to pump the vacuum chamber to 800Pa, then turn on the Roots pump to pump the vacuum chamber to 10Pa, and then turn on the molecular pump and the low-temperature water vapor pump to pump the vacuum degree of the vacuum chamber to 1.0× 10 -3 Pa; inject 100sccm Ar gas with a purity greater than 99.99%, and the air pressure is 0.50Pa; turn on the high-voltage ion source power supply, and adjust the high-voltage ion source current to 3A; the high-voltage ion source voltage is 3000V, and the bombardment time is 15min; remove the parts to be plated Oxidation (passivation) layer, dirt and burrs on the surface, that is, the processed base part.

[0030] The Ar gas with a purity greater than 99.99% of 80sccm was introduced, and the treated base member was bombarded with high-energy mo...

Embodiment 3

[0032] Example 3 The single crystal silicon wafer was ultrasonically cleaned with acetone in a cleaning device for 10 minutes. 2 Dry, and then put it into the vacuum chamber; first use the mechanical pump to pump the vacuum chamber to 800Pa, then turn on the Roots pump to pump the vacuum chamber to 10Pa, and then turn on the molecular pump and the low-temperature water vapor pump to pump the vacuum degree of the vacuum chamber to 1.0× 10 -3 Pa; pass 100sccm of Ar gas with a purity greater than 99.99%, and the air pressure is 0.80Pa; turn on the high-voltage ion source power supply, and adjust the high-voltage ion source current to 5A; the high-voltage ion source voltage is 4000V, and the bombardment time is 15min; remove the parts to be plated Oxidation (passivation) layer, dirt and burrs on the surface, that is, the processed base part.

[0033] Enter 80sccm of Ar gas with a purity greater than 99.99%, first use a high-power pulsed magnetron sputtering power supply to bombar...

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Abstract

The invention relates to a method for preparing a molybdenum disulfide-carbon multilayer film with a bionic structure of sub-10 nanometers. The method refers to: preparing a molybdenum disulfide layer by using a high-power pulse unbalanced magnetron sputtering method on a treated base part, Using high-pressure plasma immersion ion implantation technology, CH with a purity greater than 99.99% 4 Plasma is injected onto the molybdenum disulfide layer to form a carbon layer, and the cycle is repeated for 40 to 80 cycles, and the thickness of each layer is controlled below 10nm, that is, alternately deposited on the base component to form a sub-10nm biomimetic structure Molybdenum disulfide-carbon multilayer films. The process of the present invention is simple, and the prepared 10 nanometer level bionic structure molybdenum disulfide-carbon multilayer film has excellent comprehensive properties such as ultra-low friction coefficient, ultra-low wear, high elastic recovery, high binding force, etc., and can greatly improve the space components. quality and service life.

Description

technical field [0001] The invention relates to the preparation of a solid lubricating film for space, in particular to a preparation method of a sub-10 nanometer bionic structure molybdenum disulfide-carbon multilayer film. Background technique [0002] Lubrication failure of key moving parts of space technology in vacuum and irradiation environments has become a bottleneck restricting the life and reliability of space technology equipment. At present, space machinery is developing in the direction of large-scale and long-term operation, and the performance requirements for lubricating materials are increasing. Traditional space solid lubricating materials have a high friction coefficient (about 0.1), low hardness, and are prone to wear debris and wear. For some high-precision, high-reliability, and pollution-free space moving parts, they cannot meet the requirements of effective system lubrication. In recent years, the world's aerospace powers are committed to the develop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/48
CPCC23C14/35C23C14/0623C23C14/48C23C14/0605
Inventor 魏晓莉高凯雄
Owner LANZHOU UNIV OF ARTS & SCI
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