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Si-based GaN epitaxial low-dislocation film and preparation method thereof

A low-dislocation and epitaxy technology, applied in the field of microelectronics, which can solve problems such as cracks, stacking faults, and thin-film dislocations

Pending Publication Date: 2020-05-08
西安电子科技大学芜湖研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Due to the very serious thermal mismatch and lattice mismatch problems of growing GaN films on Si substrates, for example, the thermal mismatch between (0001) plane GaN and (111) plane Si is 54%, and the lattice mismatch is 17%, so that Si-based GaN films are often in a state of tensile strain during epitaxial growth, which can easily lead to cracks
Severe mismatch problems will also cause a large number of microstructural defects such as dislocations and stacking faults in the film, resulting in a decrease in the electrical and optical properties of the film.

Method used

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  • Si-based GaN epitaxial low-dislocation film and preparation method thereof
  • Si-based GaN epitaxial low-dislocation film and preparation method thereof
  • Si-based GaN epitaxial low-dislocation film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0027] Growth in MOCVD system by metal organic chemical vapor deposition:

[0028] 1. First put the Si substrate into the reaction chamber and raise the temperature to 1100°C, and remove the oxide film on the surface under H2 conditions;

[0029] 2. On the basis of the above steps, the temperature is lowered to 1000° C., and a layer of ALN nucleation layer is grown with a thickness of 100 nm. The film thickness is realized by controlling the deposition time and cooperating with MOCVD monitoring system.

[0030] 3. Based on the above steps, the temperature is raised to 1100° C., and an ALGaN buffer layer is grown with a thickness of 1 μm.

[0031] 4. On the basis of the previous steps, the temperature was lowered to 800° C., and a dislocation barrier layer with a thickness of 200 nm was grown.

[0032] 5. On the basis of the above steps, the temperature is raised to 1100° C., and the GaN channel layer, AlGaN barrier layer and GaN cap layer are grown, with thicknesses of 2um, ...

Embodiment 2

[0034] Growth in MOCVD system by metal organic chemical vapor deposition:

[0035] 1. First put the Si substrate into the reaction chamber and raise the temperature to 1100°C, and remove the oxide film on the surface under H2 conditions;

[0036] 2. On the basis of the above steps, the temperature is lowered to 1000° C., and a layer of ALN nucleation layer is grown with a thickness of 100 nm. The film thickness is realized by controlling the deposition time and cooperating with MOCVD monitoring system.

[0037] 3. Based on the above steps, the temperature is raised to 1100° C., and an ALGaN buffer layer is grown with a thickness of 1 μm.

[0038] 4. On the basis of the above steps, the temperature is lowered to 800° C., and a dislocation barrier layer with a thickness of 300 nm is grown.

[0039] 5. On the basis of the above steps, the temperature is raised to 1100° C., and the GaN channel layer, AlGaN barrier layer and GaN cap layer are grown, with thicknesses of 2um, 30nm,...

Embodiment 3

[0041] Growth in MOCVD system by metal organic chemical vapor deposition:

[0042] 1. First put the Si substrate into the reaction chamber and raise the temperature to 1100°C, and remove the oxide film on the surface under H2 conditions;

[0043] 2. On the basis of the above steps, the temperature is lowered to 1000° C., and a layer of ALN nucleation layer is grown with a thickness of 100 nm. The film thickness is realized by controlling the deposition time and cooperating with MOCVD monitoring system.

[0044] 3. Based on the above steps, the temperature is raised to 1100° C., and an ALGaN buffer layer is grown with a thickness of 1 μm.

[0045] 4. On the basis of the above steps, the temperature is lowered to 800° C., and a dislocation barrier layer with a thickness of 400 nm is grown.

[0046] 5. On the basis of the above steps, the temperature is raised to 1100° C., and the GaN channel layer, AlGaN barrier layer and GaN cap layer are grown, with thicknesses of 2um, 30nm,...

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Abstract

The invention discloses a Si-based GaN epitaxial low-dislocation thin film, and belongs to the technical field of microelectronics. The Si-based GaN epitaxial low-dislocation thin film comprises a silicon substrate, an AlN nucleating layer, an AlGaN buffer layer, a low-temperature GaN dislocation barrier layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are sequentiallystacked from bottom to top. The dislocation density in the gallium nitride epitaxial layer can be effectively reduced by utilizing the low-temperature GaN dislocation barrier layer, and meanwhile, thestress in the epitaxial film is effectively controlled, so that the crack-free and low-warping-degree high-quality AlGaN / GaN heterojunction epitaxial material on the Si substrate is obtained.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a dislocation blocking layer technology in the epitaxial growth of high-quality semiconductor devices, in particular to a Si-based GaN epitaxial low dislocation thin film and a preparation method thereof. Background technique [0002] Due to the very serious thermal mismatch and lattice mismatch problems of growing GaN films on Si substrates, for example, the thermal mismatch between (0001) plane GaN and (111) plane Si is 54%, and the lattice mismatch is 17%, the Si-based GaN film is often in a state of tensile strain during epitaxial growth, which easily leads to cracks. Severe mismatch problems will also cause a large number of microstructural defects such as dislocations and stacking faults in the film, which will cause the degradation of the electrical and optical properties of the film. Contents of the invention [0003] The purpose of the present invention is to o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/02
CPCH01L29/0603H01L29/0688H01L21/0254H01L21/02587
Inventor 陆俊王东吴勇陈兴汪琼葛林男严伟伟何滇曾文秀王俊杰操焰崔傲袁珂陈军飞张进成
Owner 西安电子科技大学芜湖研究院
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