Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of polishing liquid and its preparation method and application

A polishing liquid and polishing accelerator technology, applied in the field of polishing liquid, can solve the problems of short cycle life and unstable performance of polishing liquid, and achieve the effects of reducing crystallization, reducing the time of cleaning the machine, and reducing volatilization.

Active Publication Date: 2021-08-17
广东惠尔特纳米科技有限公司
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These substances are used in combination according to the ratio, so that the polishing rate is kept in a relatively stable state during the process of polishing sapphire, and the surface of the polished sapphire has no crystallization, thus overcoming the technical problems of unstable performance and short cycle life of the sapphire polishing liquid , can also reduce the cost of sapphire polishing, but it does not mention that it will not cause damage to the sapphire wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of polishing liquid and its preparation method and application
  • A kind of polishing liquid and its preparation method and application
  • A kind of polishing liquid and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The present embodiment provides a kind of polishing liquid, and described polishing liquid comprises the following components by weight percentage:

[0058]

[0059] Wherein the particle diameter of silica in silica sol is 120nm, and the solid capacity of silica in silica sol is 40%; Dispersant is polyethylene glycol 400; pH adjuster is potassium hydroxide, ethylenediamine and triethanolamine Combination, the mass ratio of potassium hydroxide, ethylenediamine and triethanolamine is 1:1:1; the humectant is butanediol; the mass ratio of liquid lubricant and cyclodextrin in the liquid lubricant-cyclodextrin inclusion compound 1:3, the liquid lubricant is a combination of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether, the mass ratio of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether is 1:1; liquid lubrication The preparation method of agent-cyclodextrin clathrate comprises: adding fatty alcohol polyoxyethylene ether a...

Embodiment 2

[0064] The present embodiment provides a kind of polishing liquid, and described polishing liquid comprises the following components by weight percentage:

[0065]

[0066] Wherein the particle diameter of silicon dioxide in the silica sol is 80nm, and the solid capacity of silicon dioxide in the silica sol is 50%; the dispersant is sodium citrate; the pH regulator is a combination of potassium hydroxide, ethylenediamine and triethanolamine, The mass ratio of potassium hydroxide, ethylenediamine and triethanolamine is 1:1:1; the moisturizing agent is glycerol; the mass ratio of liquid lubricant and cyclodextrin in the liquid lubricant-cyclodextrin inclusion compound is 1 : 1, the liquid lubricant is a combination of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether, the mass ratio of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether is 3:1; liquid lubricant- The preparation method of the cyclodextrin inclusion compound compris...

Embodiment 3

[0071] The present embodiment provides a kind of polishing liquid, and described polishing liquid comprises the following components by weight percentage:

[0072]

[0073] Wherein the particle diameter of silicon dioxide in the silica sol is 150nm, and the solid capacity of silicon dioxide in the silica sol is 30%; the dispersant is sodium orthophosphate; the pH regulator is a combination of potassium hydroxide, ethylenediamine and triethanolamine, The mass ratio of potassium hydroxide, ethylenediamine and triethanolamine is 1:1:1; the moisturizing agent is propylene glycol; the mass ratio of liquid lubricant and cyclodextrin in the liquid lubricant-cyclodextrin inclusion compound is 1:5 , the liquid lubricant is a combination of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether, the mass ratio of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene ether is 2:1; liquid lubricant-cyclopaste The preparation method of the fine clathrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a polishing liquid and its preparation method and application. The polishing liquid includes the following components in weight percentage: 80-94% of silica sol; 0.05-2% of dispersant; 0.1-5% of pH regulator; liquid Lubricant-cyclodextrin inclusion compound 1-5%; humectant 1-3%; water balance; polishing fluid is used in the polishing process of sapphire wafers, while ensuring the average polishing rate, it can reduce silicon dioxide crystals Precipitation, thereby reducing the scratches of silicon dioxide crystals on sapphire wafers, on the other hand, reducing the crystallization of polishing liquid on the machine, reducing the time for cleaning the machine, thereby improving production efficiency.

Description

technical field [0001] The invention belongs to the technical field of polishing liquid, and in particular relates to a polishing liquid and its preparation method and application. Background technique [0002] Sapphire is a multifunctional oxide crystal integrating excellent optical properties, physical properties and chemical properties. Single crystal sapphire has good thermal properties, wear resistance, electrical properties and dielectric properties. Its hardness is second only to diamond, reaching Mohs 9, and it still has good stability at high temperatures. Therefore, it is used in optoelectronics, communications , national defense and other fields have a wide range of applications. [0003] With the continuous development of science and technology, the above-mentioned application fields have higher and higher requirements on the processing accuracy and surface integrity of sapphire crystals, and the high-efficiency and low-damage processing technology of sapphire h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02B24B29/00
CPCB24B29/00C09G1/02
Inventor 李薇薇钟荣峰梁振何万贵
Owner 广东惠尔特纳米科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products