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Thyristor chip junction terminal structure

A thyristor and junction terminal technology, applied in the field of semiconductor power devices, can solve the problems of poor thermal conductivity in the P1 area of ​​the anode, short circuit of the device, and occupation of the effective area of ​​the cathode, so as not to be easily damaged by chipping, increase the effective area, and reduce manufacturing costs Effect

Pending Publication Date: 2019-07-05
ANHUI PROVINCE QIMEN COUNTY HUANGSHAN ELECTRIC APPLIANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, there are two types of thyristor terminal structures, one is the structure with double-sided slotting, such as figure 1 As shown, the disadvantage of this structure is one: the solder is easy to contact with the N region during soldering, causing a short circuit of the device and not being able to withstand the reverse withstand voltage
Disadvantage 2: Even if the solder is not completely short-circuited with the N area, the solder is very close to the N area, resulting in a decrease in the reverse withstand voltage
In addition, the heat dissipation area of ​​the anode and the cathode is the same, and the heat conduction effect of the P1 area of ​​the anode is poor, resulting in unstable operation of the device in a high temperature environment for a long time
The other is a thyristor chip junction terminal structure with a P-type wall structure, such as figure 2 , image 3 As shown, due to the installation of the isolation wall, the effective area of ​​the cathode is occupied, resulting in an increase in the on-state voltage drop of the device, resulting in an increase in power consumption of the device

Method used

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  • Thyristor chip junction terminal structure
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  • Thyristor chip junction terminal structure

Examples

Experimental program
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Embodiment 2

[0033] Embodiment 2: as Figures 10 to 12 As shown, a thyristor chip junction terminal structure includes a long base region N, an anode region P1, a short base region P2, and a cathode region N arranged on the short base region P2 + , the short-circuit point 6 and the gate control area 7, a P-type protrusion 3 formed by diffusion is partially provided on the long base area N, and the P-type protrusion 3 communicates with the anode area P1 as a whole. The short base region P2 is extended downward with a voltage groove 1, the P-type boss 3 is located below the voltage groove 1, and the bottom of the voltage groove 1 is on the P-type boss 3 or partially on the long base region N , partly located on the P-shaped boss. The P-type mesa 3 includes a P-type region 301 adjacent to the long base region N and a P+-type buffer barrier layer 302 outside the P-type region 301 . The P-type region 301 and the P+-type buffer barrier layer 302 are formed by diffusion of P-type impurities. In...

Embodiment 3

[0035] Embodiment 3: As another formation structure of the P-type region 301 and the P+-type buffer barrier layer 302, the side edge of the anode region P1 is provided with a circle of step grooves 13 with at least one step, preferably, a step groove 13 is provided with a two-level stepped structure, such as Figure 13 As shown, the step groove 13 includes a first step 131 and a second step 132, the depth h1 of the first step 131 is 50-80um, the depth h2 of the second step 132 is 30-50um, and the width L1 of the first step 131 is 100 ~200um, the width L2 of the second step 132 is 50~100um. In actual production, two adjacent chips share a groove, the grooves are designed symmetrically, and formed as follows after dicing: Figure 12 The single-side stepped groove 13 structure shown. After the P-type impurity is diffused in the stepped groove 13, a stepped P-type boss is formed on the long base region N. At the same height, the concentration of the P-type impurity above the fir...

Embodiment 4

[0036] Embodiment 4: Taking a chip with a withstand voltage of 2000V and a current of 100A as an example, the chip pattern design is 17mmx17mm, the total thickness is 420um, the thickness of the anode region P1 is 90um, and the short base region P2 is 90um.

[0037] Using a thyristor chip with a P-type isolation wall bilateral voltage groove structure, such as figure 2 In the shown structure, the width of the separation wall is 0.3mm, the width of the voltage groove is 0.9mm, and the voltage groove on both sides is a voltage groove with a stepped structure, therefore, the width of the cathode region is 17-(0.3+0.9)x2= 14.6mm, the area of ​​the cathode area is 14.6mmx14.6mm=213mm 2 .

[0038] Using the thyristor chip with the P-type boss structure described in Embodiment 1, the depth of the blind hole is preferably 80um, so that the P-type boss 3 is about 80um higher than the anode region P1, and the P-type boss 3 is a lower concentration. P-type impurity composition. The P...

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Abstract

The invention discloses a thyristor chip junction terminal structure. The thyristor chip junction terminal structure comprises a long base region N, an anode region P1, a short base region P2, and a cathode region N +, a short-circuit point and a gate control region which are arranged on the P2, a negative bevel angle formed on short base region P, and a P-type boss formed by diffusion locally arranged on the long base region N. The P-type boss and the short base region P1 communicate to one body, the P-type boss is located at the lower portion of a voltage groove, and the bottom portion of the voltage groove is located on the P-type boss. The voltage groove is located around the thyristor chip and is a single-side groove structure, and a circle of the P-type boss is formed around the thyristor chip. The thyristor chip junction terminal structure is good in mechanical strength, is not easy to collapse edges, can effectively improve the product percent of pass and the electrical characteristics, and can be widely applied to the field of thyristor chips.

Description

technical field [0001] The invention relates to the field of semiconductor power devices, in particular to a thyristor chip junction terminal structure. Background technique [0002] At present, there are two types of thyristor terminal structures, one is the structure with double-sided slotting, such as figure 1 As shown, the first disadvantage of this structure is that the solder is easily in contact with the N region during soldering, which causes a short circuit of the device and cannot withstand the reverse withstand voltage. Disadvantage 2: Even if the solder is not completely short-circuited with the N area, the solder is very close to the N area, resulting in a decrease in the reverse withstand voltage. In addition, the heat dissipation area of ​​the anode and the cathode is the same, and the heat conduction effect of the P1 area of ​​the anode is poor, resulting in unstable operation of the device in a high-temperature environment for a long time. The other is a t...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/336H01L29/745
CPCH01L29/745H01L29/0657H01L29/0642H01L29/0615H01L29/66363
Inventor 王民安马霖王日新郑春鸣全美淑谢富强王志亮董蕊岳春艳戴永霞倪小兰汪杏娟胡丽娟黄永辉项建辉陈明曹红军
Owner ANHUI PROVINCE QIMEN COUNTY HUANGSHAN ELECTRIC APPLIANCE
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